Support supply apparatus and method for supplying support

ABSTRACT

An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an object, a method, or a manufacturingmethod. In addition, the present invention relates to a process, amachine, manufacture, or a composition of matter. Specifically, thepresent invention relates to, for example, a semiconductor device, adisplay device, a light-emitting device, a power storage device, adriving method thereof, or a manufacturing method thereof. Morespecifically, one embodiment of the present invention relates to asupport supply apparatus or a stack manufacturing apparatus.

2. Description of the Related Art

The social infrastructures relating to means for transmittinginformation have advanced. This has made it possible to acquire,process, and send out many pieces and various kinds of information withthe use of an information processor not only at home or office but alsoat other visiting places.

With this being the situation, portable information processors are underactive development.

For example, portable information processors are often used outdoors,and force might be accidentally applied by dropping to the informationprocessors and display devices included in them. As an example of adisplay device that is not easily broken, a display device having highadhesiveness between a structure body by which a light-emitting layer isdivided and a second electrode layer is known (Patent Document 1).

REFERENCE Patent Document [Patent Document 1] Japanese Published PatentApplication No. 2012-190794 SUMMARY OF THE INVENTION

An object of one embodiment of the present invention is to provide anapparatus for supplying a support having a clean surface. Another objectis to provide an apparatus for manufacturing a stack including a supportand a remaining portion of a processed member whose one surface layer isseparated. Another object is to provide a novel manufacturing apparatus.Another object is to provide an apparatus fabricated using the novelmanufacturing apparatus.

Note that the descriptions of these objects do not disturb the existenceof other objects. In one embodiment of the present invention, there isno need to achieve all the objects. Other objects will be apparent fromand can be derived from the description of the specification, thedrawings, the claims, and the like.

One embodiment of the present invention is a support supply apparatusincluding a positioning portion provided with a first transfer mechanismthat can supply a sheet-like stacked film and a table for fixing thestacked film, a slit formation portion provided with a cutter that canform a slit which does not pass through the separator in the vicinity ofan end portion of the stacked film, and a peeling portion provided witha second transfer mechanism for transferring the stacked film whilesupporting one surface of the stacked film and a peeling mechanism thatholds and extends the separator overlapping with the end portion andthen peels the separator. The sheet-like stacked film includes a supportand a separator in contact with one surface of the support.

Another embodiment of the present invention is the above support supplyapparatus including a pretreatment portion provided with a firstpretreatment mechanism which irradiates one surface of the support withultrasonic waves and suctions the atmosphere while blowing compressedair and/or a second pretreatment mechanism which irradiates one surfaceof the support with ultraviolet rays.

The above support supply apparatus of the embodiment of the presentinvention includes the positioning portion, the slit formation portion,and the peeling portion. The positioning portion is provided with thefirst transfer mechanism for supplying the stacked film and the tablefor fixing the stacked film. The stacked film includes the support andthe separator. The slit formation portion is provided with the cutterfor forming the slit which does not pass through the separator. Thepeeling portion is provided with the second transfer mechanism and thepeeling mechanism extending and then peeling the separator. In addition,the pretreatment portion that activates a surface of the support isincluded. In this manner, the separator is peeled from the stacked filmincluding the support and the separator; thus, the support can be usedin the state where the surface of the support is clean. Moreover, thesupport can be supplied in the state where the surface is activated. Asa result, it is possible to provide a support supply apparatus that cansupply a support which is clean and has a high adhesive property.

Another embodiment of the present invention is the above support supplyapparatus including a sheet supply portion provided with a tray in whicha plurality of sheet-like stacked films is stored, a multi-feedprevention mechanism which blows a gas to the end portion of the stackedfilm picked up by a first transfer mechanism from the tray, and amulti-feed detection mechanism which detects whether the stacked filmpicked up by the first transfer mechanism is one.

The above support supply apparatus of the embodiment of the presentinvention includes the sheet supply portion provided with the multi-feedprevention mechanism which prevents multi feed by handling the pluralityof stacked films picked up by the first transfer mechanism and themulti-feed detection mechanism which detects multi-feed stacked films.Thus, the first transfer mechanism can supply one sheet-like stackedfilm with high reproducibility. As a result, the suspension time due tothe multi-feed can be shortened and a support supply unit with highproductivity can be provided.

Another embodiment of the present invention is the above support supplyapparatus including a sheet supply portion provided with an unwindingmechanism which unwinds a stacked film in a rolled state and suppliesthe stacked film, a cutting mechanism which cuts the stacked film intothe sheet-like stacked film with a predetermined size, and the tray inwhich the sheet-like stacked films are stored.

The above support supply apparatus of the embodiment of the presentinvention unwinds a stacked film, cuts this film into the sheet with apredetermined size, and is provided with the tray in which thesheet-like stacked films are stored. Thus, the sheet-like stacked filmswith a predetermined size can be manufactured from the rolled stackedfilm, and stored in the tray. As a result, a support supply apparatuswhich can supply a support with a needed size can be provided.

Another embodiment of the present invention is a stack manufacturingapparatus including a first loader unit supplying a processed member, afirst separation unit separating one surface layer of the processedmember to form a first remaining portion; a first bonding unit suppliedwith a first support and bonding the first support to the firstremaining portion with a first adhesive layer; a support supply unitsupplying the first support; and a first unloader unit transporting afirst stack including the first remaining portion, the first adhesivelayer, and the first support bonded to the first remaining portion withthe first adhesive layer.

The support supply unit includes a positioning portion provided with afirst transfer mechanism for supplying a sheet-like stacked film and atable for fixing the supplied stacked film, a slit formation portionprovided with a cutter that can form a slit which does not pass throughthe separator in the vicinity of an end portion of the stacked film, anda peeling portion provided with a second transfer mechanism fortransferring the stacked film while supporting one surface of thestacked film and a peeling mechanism that holds and extends theseparator overlapping with the end portion and then peels the separator.The sheet-like stacked film includes a support and a separator incontact with one surface of the support.

The above stack manufacturing apparatus of one embodiment of the presentinvention includes the loader unit supplying the processed member; thefirst separation unit separating the first remaining portion; the firstbonding unit bonding the first support to the first remaining portion;the support supply unit supplying the first support; and the firstunloader unit transporting a first stack including the first remainingportion, the first adhesive layer, and the first support bonded to thefirst remaining portion with the first adhesive layer. Thus, one surfacelayer of the processed member is separated to form the first remainingportion, and the first support can be bonded to the first remainingportion. As a result, a manufacturing apparatus of a stack including aremaining portion of a processed member whose one surface layer isseparated and a support.

Another embodiment of the present invention is a stack manufacturingapparatus including a first loader unit supplying a processed member, afirst separation unit separating one surface layer of the processedmember to form a first remaining portion; a first bonding unit suppliedwith a first support and bonding the first support to the firstremaining portion with a first adhesive layer; a support supply unitsupplying the first support and a second support; a first unloader unittransporting a first stack including the first remaining portion, thefirst adhesive layer, and the first support bonded to the firstremaining portion with the first adhesive layer; a second loader unitsupplying the first stack; a trigger formation unit forming a separationtrigger in the vicinity of an end portion of the first remaining portionand an end portion of the first support; a second separation unitseparating one surface layer of the first stack to form a secondremaining portion; a second bonding unit supplied with the secondsupport and bonding the second support to the second remaining portionwith a second adhesive layer; and a second unloader unit transporting asecond stack including the second remaining portion, the second adhesivelayer, and the second support bonded to the second remaining portionwith the second adhesive layer.

The support supply unit includes a positioning portion provided with afirst transfer mechanism for supplying a sheet-like stacked film and atable for fixing the supplied stacked film, a slit formation portionprovided with a cutter that can form a slit which does not pass throughthe separator in the vicinity of an end portion of the stacked film, anda peeling portion provided with a second transfer mechanism fortransferring the stacked film while supporting one surface of thestacked film and a peeling mechanism that holds and extends theseparator overlapping with the end portion and then peels the separator.The sheet-like stacked film includes a support and a separator incontact with one surface of the support.

The above stack manufacturing apparatus of one embodiment of the presentinvention includes the loader unit supplying the processed member, thefirst separation unit separating the first remaining portion, the firstbonding unit bonding the first support to the first remaining portion,the support supply unit supplying the first support and the secondsupport, the first unloader unit transporting a first stack includingthe first remaining portion, the first adhesive layer, and the firstsupport bonded to the first remaining portion with the first adhesivelayer, the stack loader unit, the trigger formation unit forming theseparation trigger, the second separation unit separating the secondremaining portion, the second bonding unit bonding the second support tothe second remaining portion, and the second unloader unit transportinga second stack including the second remaining portion, the secondadhesive layer, and the second support bonded to the second remainingportion with the second adhesive layer. Thus, both of the surface layersof the processed member are separated to form the second remainingportion, and the first support and the second support can be bonded tothe second remaining portion. As a result, a manufacturing apparatus ofa stack including a remaining portion of a processed member whose onesurface layer is separated and a support.

According to one embodiment of the present invention, an apparatus forsupplying a support having a clean surface can be provided. Moreover, anapparatus for manufacturing a stack including a support and a remainingportion of a processed member can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a schematic view illustrating a structure of a support supplyapparatus;

FIGS. 2A1, 2A2, 2B1, 2B2, 2C1, and 2C2 illustrate structures andoperations of a positioning portion and a slit formation portion of asupport supply apparatus;

FIGS. 3A to 3D illustrate an operation of a peeling portion of a supportsupply apparatus;

FIGS. 4A1, 4A2, 4B1, 4B2, 4C1, 4C2, 4D1, and 4D2 illustrate structuresand operations of a pretreatment portion of a support supply apparatus;

FIGS. 5A and 5B illustrate structures and operations of a sheet supplyportion that can be used in the support supply apparatus;

FIG. 6 is a schematic view illustrating a structure of a stackmanufacturing apparatus of one embodiment;

FIGS. 7A1, 7A2, 7B1, 7B2, 7C, 7D1, 7D2, 7E1, and 7E2 are schematic viewsillustrating a manufacturing process of a stack of one embodiment;

FIG. 8 is a schematic view illustrating a structure of a stackmanufacturing apparatus of one embodiment;

FIGS. 9A1, 9A2, 9B1, 9B2, 9C, 9D1, 9D2, 9E1, and 9E2 are schematic viewsillustrating a manufacturing process of a stack of one embodiment;

FIGS. 10A1, 10A2, 10B, 10C, 10D1, 10D2, 10E1, and 10E2 are schematicviews illustrating a manufacturing process of a stack of one embodiment;

FIG. 11 is a schematic view illustrating a structure of a stackmanufacturing apparatus of one embodiment;

FIGS. 12A1, 12A2, 12B1, and 12B2 are schematic views each illustrating astructure of a processed member of one embodiment;

FIGS. 13A and 13B illustrate a light-emitting panel of one embodiment;

FIGS. 14A and 14B illustrate a light-emitting panel of one embodiment;

FIGS. 15A to 15C illustrate a method for manufacturing a light-emittingpanel of one embodiment;

FIGS. 16A to 16C illustrate a method for manufacturing a light-emittingpanel of one embodiment;

FIGS. 17A and 17B each illustrate a light-emitting panel of oneembodiment;

FIG. 18 illustrates a light-emitting panel of one embodiment;

FIGS. 19A to 19D illustrate examples of electronic devices and lightingdevices;

FIGS. 20A and 20B illustrate one example of an electronic device;

FIGS. 21A and 21B illustrate structures of a light-emitting element anda light-emitting panel of one embodiment;

FIG. 22 is a photograph showing display quality of a light-emittingpanel of one embodiment;

FIG. 23 is a graph showing changes over time in luminance, occurring ina light-emitting element of one embodiment;

FIG. 24 is a photograph showing display quality of a light-emittingpanel of one embodiment;

FIG. 25 is a photograph showing display quality of a light-emittingpanel of one embodiment;

FIGS. 26A and 26B are each a photograph showing display quality of alight-emitting panel of one embodiment;

FIG. 27 is a photograph showing display quality of a light-emittingpanel of one embodiment;

FIGS. 28A and 28B are each a photograph showing display quality of alight-emitting panel of one embodiment;

FIG. 29 illustrates a manufacturing process of a flexible light-emittingpanel of one embodiment;

FIG. 30 illustrates a process of rolling up a film of one embodiment onwhich an OCA is formed;

FIG. 31 illustrates a manufacturing process of a flexible light-emittingpanel of one embodiment;

FIG. 32 illustrates a manufacturing process of a flexible light-emittingpanel of one embodiment;

FIGS. 33A1, 33A2, 33B1, 33B2, 33C1, 33C2, 33D1, and 33D2 illustratemanufacturing methods of a stack using a processed member of oneembodiment;

FIGS. 34A1, 34A2, 34B1, and 34B2 illustrate manufacturing methods of astack using a processed member of one embodiment;

FIGS. 35A1, 35A2, 35B1, 35B2, 35C1, 35C2, 35D1, and 35D2 are schematicviews illustrating a manufacturing method of a stack including anopening, according to one embodiment;

FIGS. 36A to 36C illustrate a structure of a flexible input/outputdevice that can be manufactured using a manufacturing apparatus of oneembodiment;

FIGS. 37A and 37B illustrate a structure of a flexible input/outputdevice that can be manufactured using a manufacturing apparatus of oneembodiment; and

FIG. 38 illustrates a structure of a flexible input/output device thatcan be manufactured using a manufacturing apparatus of one embodiment.

DETAILED DESCRIPTION OF THE INVENTION

The support supply apparatus of one embodiment of the present inventionincludes a positioning portion, a slit formation portion, and a peelingportion. The positioning portion is provided with a first transfermechanism for supplying a stacked film including a support and aseparator and a table for fixing the stacked film. The slit formationportion is provided with a cutter for forming a slit which does not passthrough the separator. The peeling portion is provided with a secondtransfer mechanism and a peeling mechanism for extending and peeling theseparator. In addition, a pretreatment portion that activates a surfaceof the support is included.

With this structure, the separator is peeled from the stacked film ofthe support and the separator; thus, the support can be used with itssurface clean. Moreover, the support can be supplied with its surfaceactivated. As a result, a support supply apparatus that can supply asupport which is clean and has a high adhesive property can be provided.

A stack manufacturing apparatus of one embodiment of the presentinvention includes the loader unit supplying the processed member; thefirst separation unit separating the first remaining portion; the firstbonding unit bonding the first support to the first remaining portion;the support supply unit supplying the first support; and the firstunloader unit transporting a first stack including the first remainingportion, the first adhesive layer, and the first support bonded to thefirst remaining portion with the first adhesive layer.

Thus, one surface layer of the processed member is separated to form thefirst remaining portion, and the first support can be bonded to thefirst remaining portion. As a result, a manufacturing apparatus of astack including a remaining portion of a processed member whose onesurface layer is separated and a support. In this specification, asurface layer refers to a layer on a surface of a processed member or astack. The surface layer is not limited to being formed using a singlelayer, but is formed using a plurality of layers. Furthermore, aremaining portion refers to a portion of the processed member or thestack except one surface layer.

Embodiments will be described in detail with reference to drawings. Notethat the present invention is not limited to the description below, andit is easily understood by those skilled in the art that various changesand modifications can be made without departing from the spirit andscope of the present invention. Accordingly, the present inventionshould not be interpreted as being limited to the content of theembodiments below. Note that in the structures of the inventiondescribed below, the same portions or portions having similar functionsare denoted by the same reference numerals in different drawings, anddescription of such portions is not repeated.

Embodiment 1

In this embodiment, a structure of a support supply apparatus of oneembodiment of the present invention is described with reference to FIG.1, FIGS. 2A1, 2A2, 2B1, 2B2, 2C1, and 2C2, FIGS. 3A to 3D, FIGS. 4A1,4A2, 4B1, 4B2, 4C1, 4C2, 4D1, and 4D2, and FIGS. 5A and 5B.

FIG. 1 is a schematic view illustrating a structure of a support supplyapparatus 500 of one embodiment of the present invention.

FIGS. 2A1, 2A2, 2B1, 2B2, 2C1, and 2C2 illustrate structures andoperations of a positioning portion 520 and a slit formation portion 530of the support supply apparatus 500 of one embodiment of the presentinvention.

FIGS. 3A to 3D illustrate an operation of a peeling portion 539 of thesupport supply apparatus 500 of one embodiment of the present invention.

FIGS. 4A1, 4A2, 4B1, 4B2, 4C1, 4C2, 4D1, and 4D2 illustrate a structureand operation of a pretreatment portion 540 of the support supplyapparatus 500 of one embodiment of the present invention.

FIGS. 5A and 5B illustrate a structure and operation of a sheet supplyportion 510 that can be used in the support supply apparatus 500 of oneembodiment of the present invention.

The support supply apparatus 500 described in this embodiment includesthe positioning portion 520 provided with a first transfer mechanism 521for supplying a sheet-like stacked film 41 c including a support 41 anda separator 41 a in contact with one surface of the support 41 and atable 525 for fixing the stacked film 41 c (see FIG. 1, FIG. 2A1, andFIG. 2A2). Note that the first transfer mechanism 521 can supply onesheet-like stacked film 41 c at a time.

In addition, the support supply apparatus 500 includes the slitformation portion 530 provided with a cutter 538 that can form a slit 41s in the vicinity of an end portion of the stacked film 41 c. The slit41 s does not pass through the separator 41 a (see FIG. 1, FIG. 2B1, andFIG. 2B2).

Moreover, the support supply apparatus 500 includes the peeling portion539 provided with a second transfer mechanism 531 for transferring thestacked film 41 c by supporting the surface which is not in contact withthe separator 41 a and a peeling mechanism 535. The peeling mechanism535 is attached to the end portion of the separator 41 a overlappingwith the slit 41 s and extends the separator 41 a, so that the separator41 a is peeled (see FIG. 1 and FIGS. 3A to 3D). The peeling mechanism535 moves relative to the second transfer mechanism 531; thus, theseparator 41 a can be extended and then peeled. Furthermore, the peelingportion 539 can be stored with the peeled separator 41 a.

In addition, the support supply apparatus 500 includes the pretreatmentportion 540 provided with a first pretreatment mechanism 542 whichirradiates one surface of the support 41 with ultrasonic waves andsuctions the atmosphere while blowing compressed air and/or a secondpretreatment mechanism 547 which irradiates one surface of the support41 with ultraviolet rays (see FIG. 1 and FIGS. 4A1, 4A2, 4B1, and 4B2).

The support supply apparatus 500 described in this embodiment includesthe positioning portion 520, the slit formation portion 530, and thepeeling portion 539. The positioning portion 520 is provided with thefirst transfer mechanism 521 for supplying the stacked film 41 cincluding the support 41 and the separator 41 a and the table 525 forfixing the stacked film 41 c. The slit formation portion 530 is providedwith the cutter 538 for forming the slit 41 s which does not passthrough the separator 41 a. The peeling portion 539 is provided with thesecond transfer mechanism 531 and the peeling mechanism 535 forextending and peeling the separator 41 a. In addition, the pretreatmentportion 540 that activates a surface of the support 41 is included. Withthis structure, the separator is peeled from the stacked film of thesupport and the separator; thus, the support 41 can be used with itssurface clean. Moreover, the support 41 can be supplied with its surfaceactivated. As a result, a support supply apparatus that can supply asupport which is clean and has a high adhesive property can be provided.

In addition, the support supply apparatus 500 described in thisembodiment includes a camera 528 for positioning, a vent 534, a supportattachment 541, a treatment tank 546, and a delivery robot 551, and thelike (see FIGS. 2A1 and 2A2 and FIGS. 4A1, 4B1, and 4C1).

The camera 528 for positioning is provided in the positioning portion520 and is used for determining whether the end portion of thesheet-like stacked film 41 c is positioned at a predetermined positionof the table 525.

The vent 534 is provided in a suction table 532 of the second transfermechanism 531. By spouting gas, the vent 534 can separate the endportion of the stacked film 41 c in which the slit 41 s is formed fromthe suction table 532 (see FIGS. 3A to 3D).

The support attachment 541 is provided in the pretreatment portion 540and presses the end portion of the support 41 against the suction table532 to prevent the end portion of the support 41 from separating fromthe second transfer mechanism 531 by the first pretreatment mechanism542 that irradiates the support 41 with ultrasonic waves and suctionsthe atmosphere while blowing compressed air.

The treatment tank 546 is provided in the pretreatment portion 540 andhas an opening in an upper portion that the second transfer mechanism531 can cover. By stopping up the opening, leakage of ultraviolet raysemitted by the second pretreatment mechanism 547 can be prevented.

Elements included in the support supply apparatus of one embodiment ofthe present invention will be described below.

<Sheet Supply Portion>

The sheet supply portion 510 is stored with the sheet-like stacked films41 c. For example, a tray with a predetermined size and having anopening in an upper portion, which can be stored with the sheet-likestacked films to be aligned, can be used as the sheet supply portion510.

The sheet-like stacked film 41 c includes the support 41 and theseparator 41 a in contact with one surface of the support 41.Furthermore, a support 41 b may be provided on the other surface of thesupport 41 (see FIG. 2A1). The separator 41 a and the support 41 b canprotect the surfaces of the support 41 against damage and attachment ofdirt.

A flexible resin film or the like can be used as the support 41. As theseparator 41 a and the support 41 b, a resin film or the like whosesurface is subjected to releasing treatment can be used. As a resin, forexample, it is possible to use a material containing polyester,polyolefin, polyamide, polyimide, aramid, polycarbonate, acrylic, or acomposite of a plurality of resins selected from these, or a stackincluding a plurality of materials selected from these.

<First Transfer Mechanism>

The first transfer mechanism 521 can move between the sheet supplyportion 510 and the positioning portion 520 (see FIG. 1 and FIGS. 2A1and 2A2). The first transfer mechanism 521 transfers the sheet-likestacked film 41 c to the table 525 in the positioning portion 520.

The first transfer mechanism 521 has a suction pad 523, which canadvance and retreat.

With the use of the advancing suction pad 523, the first transfermechanism 521 suctions the surface of the sheet-like stacked film 41 cthat is not in contact with the separator 41 a, and the suction pad 523retreats to pick up the sheet-like stacked film 41 c from the sheetsupply portion 510.

Then, the first transfer mechanism 521 places the sheet-like stackedfilm 41 c at the predetermined position of the table 525 (see FIGS. 2A1and 2A2).

<Table>

The table 525 can move between the positioning portion 520 and the slitformation portion 530 (see FIG. 1).

The table 525 has a flat portion on its upper surface and the stackedfilm 41 c can be fixed on the flat portion. Examples of a fixingmechanism of the stacked film 41 c are a suction chuck and anelectrostatic chuck.

The flat portion of the table 525 can move and rotate along the flatsurface including the flat portion (see FIGS. 2A2 and 2B2).

<Camera for Positioning>

The camera 528 for positioning can take an image for determining whetherthe end portion of the sheet-like stacked film 41 c is positioned at apredetermined position of the table 525. When the end portion of thesheet-like stacked film 41 c is not positioned at the predeterminedposition, the sheet-like stacked film 41 c is released from the table525 and picked up by the first transfer mechanism 521, and then thetable 525 moves and rotates to place the end portion of the sheet-likestacked film 41 c at the predetermined position.

Note that it is useful that the predetermined position at which thesheet-like stacked film 41 c is positioned be set for each size on thebasis of a corner of the sheet-like stacked film 41 c because thesheet-like stacked films 41 c having different sizes are each placed ata predetermined position in the same method.

<Cutter>

The cutter 538 is provided in the slit formation portion 530. The cutter538 forms the slit 41 s which does not pass through the separator 41 ain the vicinity of the end portion of the stacked film 41 c (see FIGS.2B1 and 2B2). Specifically, the distance between an edge of the cutter538 and the table 525 is adjusted so that the support 41 b and thesupport 41 of the sheet-like stacked film 41 c are cut and the separator41 a is not cut. Note that forming a slit while remaining part of anobject to be processed is referred to as “half-cutting”.

It is also possible that a detector which detects a touch of the edge beprovided on the cutter 538 and the edge of the cutter be pushed to apredetermined depth.

Note that it is useful that the position at which the slit 41 s isformed be set at a corner of the sheet-like stacked film 41 c becausethe slits 41 s can be formed in the sheet-like stacked films 41 c havingdifferent sizes in the same method.

<Second Transfer Mechanism>

The second transfer mechanism 531 can move between the slit formationportion 530 and the peeling portion 539 (see FIG. 1). Moreover, thesecond transfer mechanism 531 can move between the slit formationportion 530 and the pretreatment portion 540.

The second transfer mechanism 531 transfers the stacked film 41 cbetween the slit formation portion 530 and the peeling portion 539 whilesupporting the surface of the stacked film 41 c that is not in contactwith the separator 41 a.

The second transfer mechanism 531 includes the suction table 532 whichsuctions the surface of the stacked film 41 c that is not in contactwith the separator 41 a, a suction pad 533 which can advance and retreatfrom the suction table, and the vent 534 which can spout gas to separatethe end portion of the stacked film 41 c in which the slit 41 s isformed from the suction table 532 (see FIGS. 2C1 and 2C2 and FIGS. 3A to3D).

Note that the second transfer mechanism 531 can deliver the support 41 bto the pretreatment portion 540 on a delivery chamber 550 side.

Specifically, the support 41 b is suctioned by the suction pad 533, andthen the support 41 b is released from the suction table 532. Next, thesuction pad 533 advances and the support 41 b is separated from thesuction table 532 (see FIGS. 4C1 and 4C2).

The delivery robot 551 provided with a suction pad 553 is interposedbetween the suction table 532 and the support 41 b, and the support 41is delivered from the suction pad 533 to the suction pad 553.

The support 41 b suctioned by the suction pad 553 of the delivery robot551 is pulled out, whereby the support 41 is supplied to the deliverychamber 550 (see FIGS. 4D1 and 4D2).

<Peeling Mechanism>

The peeling mechanism 535 is provided in the peeling portion 539. Thepeeling mechanism 535 can hold the separator 41 a in a portionoverlapping with the end portion of the stacked film 41 c in which theslit 41 s is formed. For example, a suction pad and the like can be usedfor the peeling mechanism 535 (see FIG. 3A).

A method of peeling the separator 41 a by the peeling mechanism 535 isdescribed with reference to FIGS. 3A to 3D.

In a first step, the second transfer mechanism 531 moves so that the endportion of the stacked film 41 c in which the slit 41 s is formed isplaced in the vicinity of the peeling mechanism 535 (see FIG. 3A).

In a second step, the suction pad of the peeling mechanism 535 is in astate where the pad can suction, and the vent 534 spouts gas such asair. The spouted gas makes the end portion of the stacked film 41 c inwhich the slit 41 s is formed separate from the second transfermechanism 531, and the end portion is suctioned by the suction pad ofthe peeling mechanism 535 (see FIG. 3B).

In a third step, the second transfer mechanism 531 provided with thesuction table 532 moves relative to the suction pad of the peelingmechanism 535 that suctions the end portion in which the slit 41 s isformed, whereby stress is applied in a direction where the separator 41a extends or the separator 41 a twists. Thus, in the portion where theslit 41 s is formed, a separation trigger, at which the separator 41 ais peeled from the support 41, is formed (see FIG. 3C).

In a fourth step, the second transfer mechanism 531 and/or the peelingmechanism 535 moves in a direction where the separator 41 a is peeled.Thus, the separator 41 a can be peeled (see FIG. 3D). For example, inthe case where the predetermined slit 41 s is formed at a corner of thesheet-like stacked film 41 c, the peeling mechanism 535 moves in adiagonal direction of the second transfer mechanism 531.

After the separator 41 a is peeled, the separator 41 a is released fromthe suction pad of the peeling mechanism 535. Thus, the separator 41 afalls down and is stored in the peeling portion 539.

With such a peeling method, only the separator 41 a which is not cutfrom a slit can be peeled certainly. Specifically, a defect of peelingthe support 41 from the support 41 b which is cut from a slit by mistakecan be unlikely to be caused.

<First Pretreatment Mechanism>

The first pretreatment mechanism 542 is provided in the pretreatmentportion 540 (see FIG. 1 and FIGS. 4A1 and 4A2). The second transfermechanism 531 places one surface of the support 41 toward the firstpretreatment mechanism 542.

The first pretreatment mechanism 542 irradiates one surface of thesupport 41 with ultrasonic waves and suctions the atmosphere whileblowing compressed air; thus, foreign substances attached to one surfaceof the support 41 can be removed. Note that it is preferable that thepressure of compressed air be higher because the foreign substances canbe removed efficiently, and for example, the pressure can be 14 kPa,preferably 25 kPa. Moreover, it is preferable that one surface of thesupport 41 not be in contact with the first pretreatment mechanism 542and the distance between the one surface of the support 41 and the firstpretreatment mechanism 542 be 5 mm or shorter because the foreignsubstances can be removed efficiently.

In the case where the first pretreatment mechanism 542 performstreatment on one surface of the support 41 in a linear shape, the firstpretreatment mechanism 542 moves relative to the one surface of thesupport 41.

Furthermore, the support attachment 541 presses the end portion of thesupport 41 to prevent the end portion of the support 41 from separatingfrom the second transfer mechanism 531.

<Second Pretreatment Mechanism>

The second pretreatment mechanism 547 is provided in the pretreatmentportion 540 (see FIG. 1). The second transfer mechanism 531 places onesurface of the support 41 toward the second pretreatment mechanism 547(see FIGS. 4B1 and 4B2).

The second pretreatment mechanism 547 irradiates one surface of thesupport 41 with ultraviolet rays, whereby an organic material and thelike attached to or suctioned to the one surface of the support 41 canbe removed. It is preferable that the second pretreatment mechanism 547be placed near but not in contact with the one surface of the support 41because the organic material and the like can be removed efficiently.For example, the distance between the second pretreatment mechanism 547and the one surface of the support 41 may be approximately 5 mm.Moreover, by generating ozone, the attached or suctioned organicmaterial and the like can be removed efficiently.

In the case where the second pretreatment mechanism 547 performstreatment on one surface of the support 41 in a linear shape, the secondpretreatment mechanism 547 moves relative to the one surface of thesupport 41.

The treatment tank 546 has the opening in an upper portion that thesecond transfer mechanism 531 can cover. By covering the opening,leakage of ultraviolet rays emitted from the second pretreatmentmechanism 547 can be prevented.

<Modification Example>

As a modification example of this embodiment, a structure in which thesupport supply apparatus 500 includes the sheet supply portion 510supplying the sheet-like stacked films 41 c is described with referenceto FIGS. 5A and 5B.

FIGS. 5A and 5B illustrate a structure and operation of the sheet supplyportion 510. FIG. 5A illustrates a tray and a multi-feed preventionmechanism of the sheet supply portion 510 and FIG. 5B illustrates anunwinding mechanism and a cutting mechanism of the sheet supply portion510.

The support supply apparatus 500 described as a modification example ofthis embodiment includes the sheet supply portion 510 provided with atray 517 in which the sheet-like stacked films 41 c are stored, amulti-feed prevention mechanism 518 which blows gas to the end portionof the stacked film 41 c picked up by the first transfer mechanism 521from the tray 517, and a multi-feed detection mechanism 519 whichdetects whether one or plural stacked films 41 c are picked up by thefirst transfer mechanism 521 (see FIG. 5A).

The support supply apparatus 500 described as a modification example ofthis embodiment includes the sheet supply portion 510 provided with themulti-feed prevention mechanism 518 which prevents multi feed byhandling the plurality of stacked films 41 c picked up by the firsttransfer mechanism 521 by mistake and the multi-feed detection mechanism519 which detects multi-feed stacked films. Thus, the first transfermechanism 521 can supply one sheet-like stacked film 41 c with highreproducibility. As a result, the suspension time due to the multi feedcan be shortened and a support supply unit with high productivity can beprovided.

In addition, the support supply apparatus 500 described as amodification example of this embodiment includes the sheet supplyportion 510 including an unwinding mechanism 511 which supplies astacked film from the state of being rolled up, a cutting mechanism 513which provides the sheet-like stacked film with a predetermined size,and the tray 517 in which the sheet-like stacked films 41 c are stored(see FIG. 5B).

The support supply apparatus 500 described as a modification example ofthis embodiment unwinds a stacked film, cuts this film into the sheetwith a predetermined size, and is provided with the tray 517 in whichthe sheet-like stacked films 41 c are stored. Thus, the sheet-likestacked films 41 c with a predetermined size can be manufactured from arolled stacked film 41 r, and stored in the tray 517. As a result, asupport supply apparatus which can supply a support with an appropriatesize can be provided.

Components of the support supply apparatus which is a modificationexample of this embodiment are described below.

<Tray>

The tray 517 has an opening in an upper portion and the plurality ofsheet-like stacked films 41 c is stored in the tray 517 (see FIG. 5A).

The suction pad 523 of the first transfer mechanism 521 can advance tosuction a back surface of one stacked film 41 c and retreat to pick upthe stacked film 41 c.

The height of the tray 517 may be adjusted so that the first transfermechanism 521 can pick up each stacked film 41 c at the same height.Specifically, the height of the tray 517 is detected and a servomotor ora cylinder may control the height to be uniform.

Furthermore, the height of the tray 517 shows the number of stackedfilms 41 c remaining in the tray 517. When the amount of remainingstacked films 41 c is small, the alarm is sounded, whereby the user ispromoted to supply the stacked films 41 c.

The height of the tray 517 can be known by not only a distance sensorbut also a sensor which detects a distance at which the suction pad 523advances to suction the stacked film 41 c, and the like.

<Multi-Feed Prevention Mechanism>

The multi-feed prevention mechanism 518 prevents a defect that the firsttransfer mechanism 521 transfers the plurality of stacked films 41 c tothe table 525. For example, the multi-feed prevention mechanism 518blows gas such as air to the end portion of the stacked film 41 c pickedup by the first transfer mechanism 521, whereby the stacked film 41 cwhich is not suctioned is separated from the stacked film 41 c suctionedby the suction pad 523.

<Multi-Feed Detection Mechanism>

The multi-feed detection mechanism 519 detects whether the firsttransfer mechanism 521 is transferring the plurality of stacked films 41c or not. For example, from the intensity of the reflected wave of theirradiation ultrasonic waves or the intensity of the transmitted lightof the irradiation light, whether the first transfer mechanism 521 istransferring one stacked film 41 c or not can be known.

<Unwinding Mechanism>

The unwinding mechanism 511 takes out a stacked film from the rolledstacked film 41 r.

<Cutting Mechanism>

The cutting mechanism 513 cuts out a stacked film with a predeterminedsize from the stacked film with a size larger than the predeterminedsize. For example, the cutting mechanism 513 includes a butting portion512 b, a guide (not illustrated) which guides the unwound stacked filmto the butting portion 512 b, and a film attachment 512 a placed at apredetermined distance from the butting portion 512 b. Thus, the unwoundfilm can be cut to have a predetermined size.

Note that it is probable that the tray 517 be placed under the cuttingmechanism 513 and the cut out sheet-like stacked films 41 c be stored inthe tray 517.

Alternatively, the plurality of trays 517 is placed in a turret, and thesheet-like stacked films cut out by the cutting mechanism 513 may bestored in the trays corresponding to the size. Thus, the user can selecta sheet-like stacked film with a needed size by rotating the turret.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 2

In this embodiment, a structure of a stack manufacturing apparatus ofone embodiment of the present invention is described with reference toFIG. 6 and FIGS. 7A1, 7A2, 7B1, 7B2, 7C, 7D1, 7D2, 7E1, and 7E2.

FIG. 6 is a schematic view illustrating a structure of a stackmanufacturing apparatus 1000A that is one embodiment of the presentinvention, and a conveyance path of a processed member and a stack in aprocess. FIGS. 7A1, 7A2, 7B1, 7B2, 7C, 7D1, 7D2, 7E1, and 7E2 areschematic views illustrating a process for manufacturing a stack withthe use of the stack manufacturing apparatus 1000A that is oneembodiment of the present invention. FIGS. 7A1, 7B1, 7D1, and 7E1 on theleft side are cross-sectional views (along line X1-X2) illustratingstructures of a processed member and a stack. FIGS. 7A2, 7B2, 7D2, and7E2 on the right side are top views corresponding to the cross-sectionalviews.

<Structure of Stack Manufacturing Apparatus 1000A>

The stack manufacturing apparatus 1000A described in this embodimentincludes a first loader unit 100, a first separation unit 300, a firstbonding unit 400, and a support supply unit 500U (see FIG. 6).

The first loader unit 100 can be supplied with a processed member 80 andsupply the processed member 80. Note that the first loader unit 100 canalso serve as a first unloader unit.

The first separation unit 300 separates one surface layer 80 b of theprocessed member 80 to form a first remaining portion 80 a (see FIG. 6and FIGS. 7A1, 7A2, 7B1, 7B2, and 7C).

The first bonding unit 400 is supplied with the first remaining portion80 a and a first support 41, and bonds the first remaining portion 80 ato the first support 41 with a first adhesive layer 31 (see FIG. 6 andFIGS. 7D1, 7D2, 7E1, and 7E2).

The support supply unit 500U includes the support supply apparatus 500in Embodiment 1 and supplies the first support 41 (see FIG. 6).

The first loader unit 100 also serving as the first unloader unit can besupplied with and can transport a stack 81 including the first adhesivelayer 31 and the first remaining portion 80 a and the first support 41that are bonded to each other with the first adhesive layer 31 (see FIG.6 and FIGS. 7E1 and 7E2).

The stack manufacturing apparatus 1000A that is one embodiment of thepresent invention includes the first loader unit 100 also serving as thefirst unloader unit that supplies the processed member 80 and transportsthe stack 81 including the first adhesive layer 31 and the firstremaining portion 80 a and the first support 41 bonded to each otherwith the first adhesive layer 31; the first separation unit 300 thatseparates the first remaining portion 80 a; the first bonding unit 400that bonds the first support 41 to the first remaining portion 80 a; andthe support supply unit 500U that supplies the first support 41. Thisstructure makes it possible to bond the first support 41 to the firstremaining portion 80 a of the processed member 80 whose one surfacelayer is separated. Consequently, a manufacturing apparatus of the stack81 including the first remaining portion 80 a of the processed member 80and the first support 41 can be provided.

Furthermore, the stack manufacturing apparatus 1000A in this embodimentincludes a first storage portion 300 b, a first cleaning device 350, atransfer mechanism 111, and the like.

The first storage portion 300 b stores the one surface layer 80 bseparated from the processed member 80.

The first cleaning device 350 cleans the first remaining portion 80 aobtained from the processed member 80.

The transfer mechanism 111 transfers the processed member 80, the firstremaining portion 80 a separated from the processed member 80, and thestack 81.

The following describes individual components included in the stackmanufacturing apparatus that is one embodiment of the present invention.

<<First Loader Unit>>

The first loader unit 100 can be supplied with the processed member 80and supply the processed member 80. For example, to allow the transfermechanism 111 to transfer a plurality of processed members 80successively, a multistage storage capable of storing the plurality ofprocessed members 80 can be included.

Furthermore, the first loader unit 100 in this embodiment also serves asthe first unloader unit. The first loader unit 100 transports the stack81 including the first remaining portion 80 a, the first adhesive layer31, and the first support 41 bonded to the first remaining portion 80 awith the first adhesive layer 31. For example, to allow the transfermechanism 111 to transfer the plurality of stacks 81 successively, amultistage storage capable of storing the plurality of stacks 81 can beincluded.

<<First Separation Unit>>

The first separation unit 300 includes a mechanism for holding onesurface layer of the processed member 80 and a mechanism for holding theother surface layer facing the one surface layer. One holding mechanismis pulled away from the other holding mechanism, whereby the one surfacelayer of the processed member 80 is separated to form the firstremaining portion 80 a.

<<First Bonding Unit>>

The first bonding unit 400 includes a mechanism for forming the firstadhesive layer 31 and a bonding mechanism for bonding the firstremaining portion 80 a to the first support 41 with the first adhesivelayer 31 provided therebetween.

Examples of the bonding mechanism for forming the first adhesive layer31 include a dispenser for applying a liquid adhesive, screen printing,and a device supplying an adhesive sheet shaped as a sheet in advance.

Note that the first adhesive layer 31 may be formed on the firstremaining portion 80 a and/or the first support 41. Specifically, thefirst support 41 provided with the first adhesive layer 31 having asheet-like shape or the like in advance may be used.

As the mechanism of bonding the first remaining portion 80 a to thefirst support 41, a mechanism of applying pressure that is controlled toapply a constant pressure or provide a uniform gap, such as a pair ofrollers, a flat plate and a roller, and a pair of flat plates facingeach other can be used.

<<Support Supply Unit>>

The support supply unit 500U supplies the first support 41. For example,the support supply unit 500U includes the sheet supply portion 510 inwhich a stack of a film and a protective film supplied in a rolled shapeis unwound and cut to a predetermined length, the positioning portion520 in which the cut film is placed at a predetermined position, theslit formation portion 530 in which part of the protective film is cut,the separation portion 539 in which the protective film is peeled fromthe film, the pretreatment portion 540 in which the surface of the filmfrom which the protective film is removed is cleaned and/or activated,and the delivery chamber 550 which supplies the cleaned and/or activatedfilm as the first support 41.

A method for manufacturing the stack 81 from the processed member 80with the use of the stack manufacturing apparatus 1000A is describedbelow with reference to FIG. 6 and FIGS. 7A1, 7A2, 7B1, 7B2, 7C, 7D1,7D2, 7E1, and 7E2.

The processed member 80 includes a first substrate 11, a firstseparation layer 12 on the first substrate 11, a first layer 13 to beseparated (hereinafter simply referred to as the first layer 13) whoseone surface is in contact with the first separation layer 12, a bondinglayer 30 whose one surface is in contact with the other surface of thefirst layer 13, a base 25 in contact with the other surface of thebonding layer 30 (see FIGS. 7A1 and 7A2). Note that a structure of theprocessed member 80 is described in detail in Embodiment 4.

<<Formation of Separation Trigger>>

The processed member 80 in which separation triggers 13 s are providedin the vicinity of the end portions of the bonding layer 30 is prepared(see FIGS. 7B1 and 7B2). The separation trigger 13 s is formed byseparating part of the first layer 13 from the first substrate 11. Partof the first layer 13 can be separated from the separation layer 12 byinserting a sharp tip into the first layer 13 from the first substrate11 side or by a method using a laser or the like (e.g., a laser ablationmethod). Accordingly, the separation trigger 13 s can be formed.

<<First Step>>

The processed member 80 in which the separation triggers 13 s areprovided in the vicinity of the end portions of the bonding layer 30 inadvance is transferred to the first loader unit 100. The first loaderunit 100 supplies the processed member 80 into the transfer mechanism111, and the transfer mechanism 111 transfers the processed member 80and supplies it into the first separation unit 300.

<<Second Step>>

The one surface layer 80 b of the processed member 80 is separated. As aresult, the first remaining portion 80 a is obtained from the processedmember 80. Specifically, from the separation trigger 13 s formed in thevicinity of the end portion of the bonding layer 30, the first substrate11 and the first separation layer 12 are separated from the first layer13 (see FIG. 7C). Through this step, the first remaining portion 80 aincluding the first layer 13, the bonding layer 30 whose one surface isin contact with the first layer 13, and the base 25 in contact with theother surface of the bonding layer 30 is obtained. Note that theseparation may be performed while the vicinity of the interface betweenthe separation layer 12 and the layer 13 is irradiated with ions toremove static electricity. Specifically, the ions may be generated by anionizer. Furthermore, separation of the layer 13 from the separationlayer 12 may be performed by injecting a liquid into the interfacebetween the layer 13 and the separation layer 12. Alternatively, theliquid may be ejected and sprayed by a nozzle 99. For example, as theliquid injected or sprayed, water, a polar solvent, or the like can beused. By injecting the liquid, an influence of static electricity andthe like generated with the separation can be reduced. Alternatively,the separation may be performed while a liquid that dissolves theseparation layer is injected. In particular, in the case where a filmcontaining a tungsten oxide is used as the separation layer 12, it ispreferable that the first layer 13 be separated while a liquidcontaining water is injected or sprayed because stress applied to thefirst layer 13 due to the separation can be reduced. For example, whenthe second step is performed by using the stack manufacturing apparatus1000A, the one surface layer 80 b of the processed member 80 isseparated using the first separation unit 300.

The transfer mechanism 111 can transfer and supply the first remainingportion 80 a. The first cleaning device 350 supplied with the firstremaining portion 80 a can clean the first remaining portion 80 a.

<<Third Step>>

The first adhesive layer 31 is formed on the first remaining portion 80a and the first remaining portion 80 a is bonded to the first support 41with the first adhesive layer 31 (see FIGS. 7D1 and 7D2).

Through this step, the stack 81 is obtained from the first remainingportion 80 a.

Specifically, the stack 81 including the first support 41, the firstadhesive layer 31, the first layer 13, the bonding layer 30 whose onesurface is in contact with the first layer 13, and the base 25 incontact with the other surface of the bonding layer 30 is obtained (seeFIGS. 7E1 and 7E2). Note that the adhesive layer 31 can be formed by anyof various methods. For example, the adhesive layer 31 can be formedwith a dispenser, by a screen printing method, or the like. Then, theadhesive layer 31 is cured by a method selected depending on itsmaterial. For example, when a light curable adhesive is used for theadhesive layer 31, light including light with a predetermined wavelengthis emitted. In the case where the stack manufacturing apparatus 1000A isused, the transfer mechanism 111 transfers the first remaining portion80 a, and the support supply unit 500U supplies the first support 41.The first bonding unit 400 is supplied with the first remaining portion80 a and the first support 41, and the first bonding unit 400 bonds thefirst remaining portion 80 a and the first support 41 to each other withthe first adhesive layer 31 in (see FIG. 6).

<<Fourth Step>>

The transfer mechanism 111 transfers the stack 81, and the stack 81 issupplied into the first loader unit 100 also serving as the firstunloader unit.

Through this step, the stack 81 is ready to be transported.

Note that the stack 81 in which the first adhesive layer 31 is not curedyet is preferably transported to cure the first adhesive layer 31outside the stack manufacturing apparatus 1000A, in which case occupancytime of the apparatus can be reduced.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 3

In this embodiment, a structure of a stack manufacturing apparatus ofone embodiment of the present invention is described with reference toFIG. 8, FIGS. 9A1, 9A2, 9B1, 9B2, 9C, 9D1, 9D2, 9E1, and 9E2, and FIGS.10A1, 10A2, 10B, 10C, 10D1, 10D2, 10E1, and 10E2.

FIG. 8 is a schematic view illustrating a structure of a stackmanufacturing apparatus 1000 that is one embodiment of the presentinvention, and the conveyance path of a processed member and a stack ina process.

FIGS. 9A1, 9A2, 9B1, 9B2, 9C, 9D1, 9D2, 9E1, and 9E2 and FIGS. 10A1,10A2, 10B, 10C, 10D1, 10D2, 10E1, and 10E2 are schematic viewsillustrating a process for manufacturing a stack with the use of thestack manufacturing apparatus 1000 that is one embodiment of the presentinvention. FIGS. 9A1, 9B1, 9D1, and 9E1 and FIGS. 10A1, 10D1, and 10E1on the left side are cross-sectional views (along line Y1-Y2 or Y3-Y4)illustrating structures of a processed member and a stack. FIGS. 9A2,9B2, 9D2, and 9E2 and FIGS. 10A2, 10D2, and 10E2 on the right side aretop views corresponding to the cross-sectional views.

<Structure of Stack Manufacturing Apparatus>

The stack manufacturing apparatus 1000 in this embodiment includes thefirst loader unit 100, the first separation unit 300, the first bondingunit 400, the support supply unit 500U, a second loader unit 600, atrigger formation unit 700, a second separation unit 800, and a secondbonding unit 900.

The first loader unit 100 can supplied with a processed member 90 andsupply the processed member 90. Note that the first loader unit 100 canalso serve as a first unloader unit.

The first separation unit 300 separates one surface layer 90 b of theprocessed member 90 to form a first remaining portion 90 a (see FIG. 8and FIGS. 9A1, 9A2, 9B1, 9B2, and 9C).

The first bonding unit 400 is supplied with the first remaining portion90 a and a first support 41, and bonds the first remaining portion 90 ato the first support 41 with a first adhesive layer 31 (see FIG. 8 andFIGS. 9D1, 9D2, 9E1, and 9E2).

The support supply unit 500U includes the support supply apparatus 500in Embodiment 1 and supplies the first support 41 and the second support42 (see FIG. 8).

The first loader unit 100 also serving as the first unloader unit can besupplied with and can transport a stack 91 including the first adhesivelayer 31 and the first remaining portion 90 a and the first support 41that are bonded to each other with the first adhesive layer 31 (see FIG.8 and FIGS. 9E1 and 9E2).

The second loader unit 600 can supplied with the first stack 91 andsupply the first stack 91. Note that the second loader unit 600 can alsoserve as a second unloader unit.

The trigger formation unit 700 forms separation trigger 91 s in thevicinity of end portions of the first remaining portion 90 a and a firstsupport 41 b in the first stack 91 (see FIGS. 10A1 and 10A2).

The second separation unit 800 separates one surface layer 91 b of thestack 91 to form a second remaining portion 91 a (see FIGS. 10A1 and10B).

The second bonding unit 900 is supplied with the second remainingportion 91 a and a second support 42, and bonds the second remainingportion 91 a to the second support 42 with a second adhesive layer 32(see FIGS. 10D1, 10D2, 10E1, and 10E2).

The second loader unit 600 also serving as the second unloader unittransports a second stack 92 including the second remaining portion 91 aand the second support 42 that are bonded to each other with the secondadhesive layer 32 (see FIG. 8 and FIGS. 10E1 and 10E2).

The stack manufacturing apparatus in this embodiment includes the loaderunit 100 also serving as the first unloader unit that supplies theprocessed member 90 and transports the stack 91 including the firstremaining portion 90 a and the first support 41 bonded to each otherwith the first adhesive layer 31; the first separation unit 300 thatseparates the first remaining portion 90 a; the first bonding unit 400that bonds the first support 41 to the first remaining portion 90 a; andthe support supply unit 500U that supplies the first support 41 and thesecond support 42; the loader unit 600 that supplies the stack 91 andtransports the stack 92 including the second remaining portion 91 a andthe second support 42 bonded to each other with the second adhesivelayer 32; the trigger formation unit 700 that forms a separationtrigger; the second separation unit 800 that separates the secondremaining portion 91 a; and the second bonding unit 900 that bonds thesecond support 42 to the second remaining portion 91 a. This structuremakes it possible to separate the both surface layers of the processedmember 90 to form the second remaining portion 91 a, and the firstsupport 41 and the second support 42 are bonded to the second remainingportion 91 a. Consequently, a manufacturing apparatus of the stack 92including the second remaining portion 91 a of the processed member 90,the first support 41, and the second support 42 can be provided.

Furthermore, the stack manufacturing apparatus 1000 in this embodimentincludes the first storage portion 300 b, a second storage portion 800b, the first cleaning device 350, a second cleaning device 850, thetransfer mechanism 111, a transfer mechanism 112, and the like.

The first storage portion 300 b stores the one surface layer 90 bseparated from the processed member 90.

The second storage portion 800 b stores the one surface layer 91 bseparated from the stack 91.

The first cleaning device 350 cleans the first remaining portion 90 aobtained from the processed member 90.

The second cleaning device 850 cleans the second remaining portion 91 aobtained from the stack 91.

The transfer mechanism 111 transfers the processed member 90, the firstremaining portion 90 a obtained from the processed member 90, and thestack 91.

The transfer mechanism 112 transfers the stack 91, the second remainingportion 91 a obtained from the stack 91, and the stack 92.

The following describes individual components included in the stackmanufacturing apparatus that is one embodiment of the present invention.

Note that the stack manufacturing apparatus 1000 is different from thestack manufacturing apparatus 1000A described in Embodiment 2 in thatthe second loader unit 600, the trigger formation unit 700, the secondseparation unit 800, the second bonding unit 900, the second storageportion 800 b, and the second cleaning device 850 are included. In thisembodiment, a structure different from that of the stack manufacturingapparatus 1000A is described, and the description in Embodiment 2 isreferred to for a structure common to that of the stack manufacturingapparatus 1000.

<<Second Loader Unit>>

The second loader unit 600 can have the same structure as the firstloader unit 100 described in Embodiment 2 except that the second loaderunit 600 can supply the stack 91.

Furthermore, the second loader unit 600 in this embodiment also servesas the second unloader unit.

<<Trigger Formation Unit>>

The trigger formation unit 700 includes a cutting mechanism which cutsthe first support 41 and the first adhesive layer 31 of the first stack91 and separates part of a second layer 23 to be separated (hereinaftersimply referred to as a second layer 23) from a second substrate 21, forexample.

Specifically, the cutting mechanism includes one or a plurality ofblades which has a sharp tip and a transfer mechanism which transfersthe blade relatively to the stack 91.

<<Second Separation Unit>>

The second separation unit 800 includes a mechanism of holding onesurface layer of the first stack 91 and a mechanism of holding the othersurface layer facing the one surface layer. One holding mechanism ispulled away from the other holding mechanism, whereby the one surfacelayer of the first stack 91 is separated to form the second remainingportion 91 a.

<<Second Bonding Unit>>

The second bonding unit 900 includes a mechanism for forming the secondadhesive layer 32 and a bonding mechanism for bonding the secondremaining portion 91 a and the second support 42 to each other with thesecond adhesive layer 32 provided therebetween.

The mechanism for forming the second adhesive layer 32 can have astructure similar to that of the first bonding unit 400 described inEmbodiment 2.

Note that the second adhesive layer 32 may be formed on the secondremaining portion 91 a and/or the second support 42. Specifically, thesecond support 42 on which the sheet-like second adhesive layer 32 isformed in advance may be used.

The bonding mechanism for bonding the second remaining portion 91 a andthe second support 42 to each other can have a structure similar to thatof the first bonding unit 400 described in Embodiment 2.

<Method for Manufacturing Stack>

A method for manufacturing the stack 92 from the processed member 90with the use of the stack manufacturing apparatus 1000 is describedbelow with reference to FIG. 8, FIGS. 9A1, 9A2, 9B1, 9B2, 9C, 9D1, 9D2,9E1, and 9E2, and FIGS. 10A1, 10A2, 10B, 10C, 10D1, 10D2, 10E1, and10E2.

The processed member 90 is different from the processed member 80 inthat the other surface of the bonding layer 30 is in contact with onesurface of the second layer 23 instead of the base 25. Specifically, inthe processed member 90, the second substrate 21, a second separationlayer 22 over the second substrate 21, and the second layer 23 whoseother surface is in contact with the second separation layer 22 areincluded, and one surface of the second layer 23 is in contact with theother surface of the bonding layer 30.

Specifically, the processed member 90 includes the first substrate 11,the first separation layer 12, the first layer 13 whose one surface isin contact with the first separation layer 12, the bonding layer 30whose one surface is in contact with the other surface of the firstlayer 13, the second layer 23 whose one surface is in contact with theother surface of the bonding layer 30, the second separation layer 22whose one surface is in contact with the other surface of the secondlayer 23, and the second substrate 21 (see FIGS. 9A1 and 9A2). Note thata structure of the processed member 90 is described in detail inEmbodiment 4.

<<First Step>>

The processed member 90 in which separation triggers 13 s are providedin the vicinity of the end portions of the bonding layer 30 is prepared(see FIGS. 911 and 9B2). The separation trigger 13 s is formed byseparating part of the first layer 13 from the first substrate 11. Partof the first layer 13 can be separated from the separation layer 12 byinserting a sharp tip into the first layer 13 from the first substrate11 side or by a method using a laser or the like (e.g., a laser ablationmethod). Accordingly, the separation trigger 13 s can be formed. Forexample, in the case where the first step is performed by using thestack manufacturing apparatus 1000, the processed member 90 in which theseparation trigger 13 s is formed is prepared. The first loader unit 100supplies the processed member 90 into the transfer mechanism 111, andthe transfer mechanism 111 transfers the processed member 90 andsupplies it into the first separation unit 300.

<<Second Step>>

The one surface layer 90 b of the processed member 90 is separated. As aresult, the first remaining portion 90 a is obtained from the processedmember 90. Specifically, from the separation trigger 13 s formed in thevicinity of the end portion of the bonding layer 30, the first substrate11 and the first separation layer 12 are separated from the first layer13 (see FIG. 9C).

Through this step, the first remaining portion 90 a including the firstlayer 13, the bonding layer 30 whose one surface is in contact with thefirst layer 13, the second layer 23 whose one surface is in contact withthe other surface of the bonding layer 30, the second separation layer22 whose one surface is in contact with the other surface of the secondlayer 23, and the second substrate 21 in this order is obtained. Notethat the separation may be performed while the vicinity of the interfacebetween the separation layer 22 and the layer 23 is irradiated with ionsto remove static electricity. Specifically, the ions may be generated byan ionizer. Furthermore, separation of the layer 13 from the separationlayer 22 may be performed by injecting a liquid into the interfacebetween the layer 23 and the separation layer 22. Alternatively, theliquid may be ejected and sprayed by a nozzle 99. For example, as theliquid injected or sprayed, water, a polar solvent, or the like can beused. By injecting the liquid, an influence of static electricity andthe like generated with the separation can be reduced. Alternatively,the separation may be performed while a liquid that dissolves theseparation layer is injected. In particular, in the case where a filmcontaining a tungsten oxide is used as the separation layer 22, it ispreferable that the second layer 23 be separated while a liquidcontaining water is injected or sprayed because stress applied to thesecond layer 23 due to the separation can be reduced. For example, whenthe second step is performed by using the stack manufacturing apparatus1000, the one surface layer 90 b of the processed member 90 is separatedusing the first separation unit 300.

The transfer mechanism 111 can transfer and supply the first remainingportion 90 a. The first cleaning device 350 supplied with the firstremaining portion 90 a can clean and supply the first remaining portion90 a.

<<Third Step>>

The first adhesive layer 31 is formed on the first remaining portion 90a (see FIGS. 9D1 and 9D2) and the first remaining portion 90 a is bondedto the first support 41 with the first adhesive layer 31. Through thisstep, the stack 91 is obtained from the first remaining portion 90 a.

Specifically, the stack 91 including the first support 41, the firstadhesive layer 31, the first layer 13, the bonding layer 30 whose onesurface is in contact with the first layer 13, the second layer 23 whoseone surface is in contact with the other surface of the bonding layer30, the second separation layer 22 whose one surface is in contact withthe other surface of the second layer 23, and the second substrate 21 inthis order is obtained (see FIGS. 9E1 and 9E2).

The transfer mechanism 111 transfers the first remaining portion 90 a,and the support supply unit 500U supplies the first support 41. Thefirst bonding unit 400 is supplied with the first remaining portion 90 aand the first support 41, and bonds the first remaining portion 90 a tothe first support 41 with the first adhesive layer 31 (see FIGS. 9D1,9D2, 9E1, and 9E2).

<<Fourth Step>>

The transfer mechanism 111 transfers the stack 91, and the first loaderunit 100 also serving as the first unloader unit transports the suppliedstack 91.

For example, when it takes time to cure the first adhesive layer, thestack 91 in which the first adhesive layer is not cured yet can betransported to cure the first adhesive layer 31 outside the stackmanufacturing apparatus 1000. Thus, occupancy time of the apparatus canbe reduced.

<<Fifth Step>>

The stack 91 is prepared. The second loader unit 600 is supplied withand supplies the stack 91 to the transfer mechanism 112, the transfermechanism 112 transfers the stack 92 to the trigger formation unit 700.

<<Sixth Step>>

Part of the second layer 23 in the vicinity of the end portion of thefirst adhesive layer 31 of the stack 91 is separated from the secondsubstrate 21 to form the second separation trigger 91 s.

For example, the first support 41 and the first adhesive layer 31 arecut from the first support 41 side, and part of the second layer 23 isseparated from the second substrate 21 along an end portion of the firstadhesive layer 31 which is newly formed.

Specifically, the first adhesive layer 31 and the first support 41 in aregion which is over the second separation layer 22 and in which thesecond layer 23 is provided are cut with a blade or the like including asharp tip, and along an end portion of the first adhesive layer 31 whichis newly formed, the second layer 23 is partly separated from the secondsubstrate 21 (see FIGS. 10A1 and 10A2).

Through this step, the separation trigger 91 s is formed in the vicinityof the end portions of the first support 41 b and the first adhesivelayer 31 which are newly formed.

<<Seventh Step>>

The second remaining portion 91 a is separated from the stack 91. As aresult, the second remaining portion 91 a is obtained from the stack 91(see FIG. 10C).

Specifically, from the separation trigger 91 s formed in the vicinity ofthe end portion of the first adhesive layer 31, the second substrate 21and the second separation layer 22 are separated from the second layer23. Through this step, the second remaining portion 91 a including thefirst support 41 b, the first adhesive layer 31, the first layer 13, thebonding layer 30 whose one surface is in contact with the first layer13, and the second layer 23 whose one surface is in contact with theother surface of the bonding layer 30 in this order is obtained. Notethat the separation may be performed while the vicinity of the interfacebetween the separation layer 22 and the layer 23 is irradiated with ionsto remove static electricity. Specifically, the ions may be generated byan ionizer. Furthermore, separation of the layer 23 from the separationlayer 22 may be performed by injecting a liquid into the interfacebetween the layer 23 and the separation layer 22. Alternatively, theliquid may be ejected and sprayed by a nozzle 99. For example, as theliquid injected or sprayed, water, a polar solvent, or the like can beused. By injecting the liquid, an influence of static electricity andthe like generated with the separation can be reduced. Alternatively,the separation may be performed while a liquid that dissolves theseparation layer is injected. In particular, in the case where a filmcontaining a tungsten oxide is used as the separation layer 22, it ispreferable that the first layer 23 be separated while a liquidcontaining water is injected or sprayed because stress applied to thefirst layer 23 due to the separation can be reduced. For example, whenthe seventh step is performed by using the stack manufacturing apparatus1000, the one surface layer 91 b of the stack 91 is separated using thesecond separation unit 800.

<<Eighth Step>>

The transfer mechanism 112 transfers the second remaining portion 91 a,and turns the second remaining portion 91 a so that the second layer 23faces upward. In the second cleaning device 850, the supplied secondremaining portion 91 a is cleaned.

The transfer mechanism 112 transfers the second remaining portion 91 a,and the support supply unit 500U supplies the second support 42.

Note that the second remaining portion 91 a may be supplied into thesecond bonding unit 900 without being supplied into the second cleaningdevice.

<<Ninth Step>>

The second adhesive layer 32 is formed on the second remaining portion91 a (see FIGS. 10D1 and 10D2). The second remaining portion 91 a isbonded to the second support 42 with the second adhesive layer 32.Through this step, the stack 92 is obtained from the second remainingportion 91 a (see FIGS. 10E1 and 10E2).

Specifically, the stack 92 including the first support 41 b, the firstadhesive layer 31, the first layer 13, the bonding layer 30 whose onesurface is in contact with the other surface of the first layer 13, thesecond layer 23 whose one surface is in contact with the other surfaceof the bonding layer 30, the second adhesive layer 32, and the secondsupport 42 in this order is obtained.

<<Tenth Step>>

The transfer mechanism 112 transfers the stack 92 to the second loaderunit 600, and the second loader unit 600 also serving as the secondunloader unit transports the stack 92.

Through this step, the stack 92 is ready to be transported.

<Modification Example>

A modification example of this embodiment is described with reference toFIG. 11.

FIG. 11 is a schematic diagram illustrating a structure of the stackmanufacturing apparatus 1000 that is one embodiment of the presentinvention, and the conveyance path of a processed member and a stack ina process.

In the modification example of this embodiment, a method formanufacturing the stack 92 from the processed member 90 with the use ofthe stack manufacturing apparatus 1000, which is different from theabove-described method, is described with reference to FIGS. 9A1, 9A2,9B1, 9B2, 9C, 9D1, 9D2, 9E1, and 9E2, FIGS. 10A1, 10A2, 10B, 10C, 10D1,10D2, 10E1, and 10E2, and FIG. 11.

Specifically, the differences between the method in this modificationexample and the above-described method are as follows: in the fourthstep, the transfer mechanism 111 transfers the stack 91 and the stack 91is supplied into the second cleaning device 850; in the fifth step, thetransfer mechanism 112 transfers the stack 91 and the stack 91 issupplied into the trigger formation unit 700; and in the eighth step,the second remaining portion 91 a is supplied into the second bondingunit 900. Thus, different steps will be described in detail below. Referto the above description for portions where the same steps can beemployed.

<Modification Example of Fourth Step>

The conveying mechanism 111 conveys the stack 91 and the stack 91 is fedinto the second cleaning device 850.

In the modification example of this embodiment, the second cleaningdevice 850 is used as a delivery chamber in which the transfer mechanism111 delivers the stack 91 to the transfer mechanism 112 (see FIG. 11).

By using the second cleaning device 850 as the delivery chamber, thestack 91 can be continuously processed without being transported fromthe stack manufacturing apparatus 1000.

<Modification Example of Fifth Step>

The transfer mechanism 112 transfers the stack 91, and the stack 91 issupplied into the trigger formation unit 700.

<<Modification Example of Eighth Step>>

The transfer mechanism 112 transfers the second remaining portion 91 a,and turns the second remaining portion 91 a so that the second layer 23faces upward. The second remaining portion 91 a is supplied into thesecond bonding unit 900.

The second bonding unit 900 forms the second adhesive layer 32 on thesupplied second remaining portion 91 a (see FIGS. 10D1 and 10D2), andbonds the second remaining portion 91 a to the second support 42 withthe second adhesive layer 32 (see FIGS. 10E1 and 10E2).

Through this step, the stack 92 is obtained from the second remainingportion 91 a. Specifically, the stack 92 includes the first layer 13,the first support 41 b bonded to one surface of the first layer 13 withthe first adhesive layer 31, the bonding layer 30 whose one surface isin contact with the other surface of the first layer 13, the secondlayer 23 whose one surface is in contact with the other surface of thebonding layer 30, and the second support 42 bonded to the other surfaceof the second layer 23 with the second adhesive layer 32.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 4

In this embodiment, structures of processed members that can be used forthe stack manufacturing apparatus that is one embodiment of the presentinvention are described with reference to FIGS. 12A1, 12A2, 12B1, and12B2.

FIGS. 12A1, 12A2, 12B1, and 12B2 are schematic views illustratingstructures of processed members that can be used to form a stack withthe use of the stack manufacturing apparatus that is one embodiment ofthe present invention.

FIG. 12A1 is a cross-sectional view (along line X1-X2) illustrating astructure of the processed member 80, which can be a stack, and FIG.12A2 is a top view corresponding to the cross-sectional view.

FIG. 12B1 is a cross-sectional view (along line Y1-Y2) illustrating astructure of the processed member 90, which can be a stack, and FIG.12B2 is a top view corresponding to the cross-sectional view.

<Structural Example 1 of Processed Member>

The processed member 80 includes the first substrate 11, the firstseparation layer 12 on the first substrate 11, the first layer 13 whoseone surface is in contact with the first separation layer 12, thebonding layer 30 whose one surface is in contact with the other surfaceof the first layer 13, and the base 25 which is in contact with theother surface of the bonding layer 30 (see FIGS. 12A1 and 12A2).

Note that the separation triggers 13 s may be provided in the vicinityof the end portions of the bonding layer 30.

<<First Substrate>>

There is no particular limitation on the first substrate 11 as long asthe first substrate 11 has heat resistance high enough to withstand amanufacturing process and a thickness and a size which can be used in amanufacturing apparatus.

For the first substrate 11, an organic material, an inorganic material,a composite material of an organic material and an inorganic material,or the like can be used. For example, an inorganic material such asglass, ceramics, or metal, can be used.

Examples of the materials that can be used for the first substrate 11are as follows: glass such as non-alkali glass, soda-lime glass, potashglass, or crystal glass; a film such as a metal oxide film, a metalnitride film, or a metal oxynitride film (e.g., a silicon oxide film, asilicon nitride film, a silicon oxynitride film, or an alumina film);SUS; aluminum; an organic material such as a resin, a resin film, orplastic (e.g., a resin film or a resin plate of polyester, polyolefin,polyamide, polyimide, polycarbonate, or an acrylic resin); a compositematerial formed by attaching a metal plate, a thin glass plate, or aninorganic material film to a resin film; a composite material formed bydispersing a fibrous or particulate metal, glass, inorganic material, orthe like into a resin film; and a composite material formed bydispersing a fibrous or particulate resin, organic material, or the likeinto an inorganic material.

For the first substrate 11, a single-layer material or a stacked-layermaterial can be used. For example, a stacked-layer material including abase and an insulating layer that prevents diffusion of impuritiescontained in the base can be used. Specifically, a stacked-layermaterial of glass and one or a plurality of films that preventsdiffusion of impurities contained in the glass and that are selectedfrom a silicon oxide layer, a silicon nitride layer, and a siliconoxynitride layer can be used. Alternatively, a stacked-layer material ofa resin and a film that prevents diffusion of impurities contained inthe resin, such as a silicon oxide film, a silicon nitride film, and asilicon oxynitride film can be used.

<<First Separation Layer>>

The first separation layer 12 is provided between the first substrate 11and the first layer 13. A boundary that separates the first layer 13from the first substrate 11 is formed in the vicinity of the firstseparation layer 12. There is no particular limitation on the firstseparation layer 12 as long as the first separation layer 12 has heatresistance high enough to withstand the manufacturing process of thefirst layer 13 formed thereon.

For the first separation layer 12, for example, an inorganic material,an organic resin, or the like can be used.

Specific examples of the inorganic material include a metal, an alloy, acompound, and the like that contain any of the following elements:tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt,zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, andsilicon.

Specifically, an organic material such as polyimide, polyester,polyolefin, polyamide, polycarbonate, and an acrylic resin can be used.

For the first separation layer 12, a single-layer material or astacked-layer material can be used. Specifically, a stacked-layermaterial of a layer containing tungsten and a layer containing an oxideof tungsten can be used.

The layer containing an oxide of tungsten can be formed by stackinganother layer to a layer containing tungsten. Specifically, the layercontaining an oxide of tungsten may be formed by stacking a siliconoxide film or a silicon oxynitride film to a layer containing tungsten.The layer containing an oxide of tungsten may be formed by performingthermal oxidation treatment, oxygen plasma treatment, nitrous oxide(N₂O) plasma treatment, treatment with a solution having strongoxidizing power (e.g., ozone water), or the like on a surface of a layercontaining tungsten.

Specifically, a layer containing polyimide can be used as the firstseparation layer 12. The layer containing polyimide has heat resistancehigh enough to withstand the various manufacturing steps of the firstlayer 13. For example, the layer containing polyimide has heatresistance of 200° C. or higher, preferably 250° C. or higher, morepreferably 300° C. or higher, still more preferably 350° C. or higher. Acondensed film containing polyimide obtained by heating a filmcontaining a monomer formed on the first substrate 11 can be used.

<<First Layer to be Separated>>

There is no particular limitation on the first layer 13 as long as thefirst layer 13 can be separated from the first substrate 11 and has heatresistance high enough to withstand the manufacturing process. Aboundary that separates the first layer 13 from the first substrate 11may be formed between the first layer 13 and the first separation layer12 or may be formed between the first separation layer 12 and the firstsubstrate 11. In the case where the boundary is formed between the firstlayer 13 and the first separation layer 12, the first separation layer12 is not included in the stack, and in the case where the boundary isformed between the first separation layer 12 and the first substrate 11,the first separation layer 12 is included in the stack. An inorganicmaterial, an organic material, a single-layer material, or astacked-layer material can be used for the first separation layer 13.

For example, an inorganic film such as a metal oxide film, a metalnitride film, and a metal oxynitride film can be used as the first layer13. Specifically, silicon oxide, silicon nitride, silicon oxynitride, analumina film, or the like can be used. Alternatively, a resin, a resinfilm, plastic, or the like can be used for the first layer 13.Specifically, a polyimide film or the like can be used.

For example, a material having the following structure can be used: afunctional layer overlapping with the first separation layer 12 and aninsulating layer that is provided between the first separation layer 12and the functional layer and can prevent unintended diffusion ofimpurities which impairs the function of the functional layer arestacked. Specifically, a 0.7-mm-thick glass plate is used as the firstsubstrate 11, and a stacked-layer material of a 200-nm-thick siliconoxynitride film and a 30-nm-thick tungsten film stacked in this orderfrom the first substrate 11 side is used for the first separation layer12. A film including a stacked-layer material of a 600-nm-thick siliconoxynitride film and a 200-nm-thick silicon nitride film stacked in thisorder from the first separation layer 12 side can be used as the firstlayer 13. Note that a silicon oxynitride film refers to a film thatincludes more oxygen than nitrogen, and a silicon nitride oxide filmrefers to a film that includes more nitrogen than oxygen. Alternatively,instead of the above first layer 13, a film including a stacked-layermaterial of a 600-nm-thick silicon oxynitride film, a 200-nm-thicksilicon nitride film, a 200-nm-thick silicon oxynitride film, a140-nm-thick silicon nitride oxide film, and a 100-nm-thick siliconoxynitride film stacked in this order from the first separation layer 12side can be used as a layer to be separated. Specifically, a polyimidefilm, a layer containing silicon oxide, silicon nitride, or the like andthe functional layer may be stacked in this order from the firstseparation layer 12 side.

<<Functional Layer>>

A functional layer is included in the first layer 13. As the functionallayer, a functional circuit, a functional element, an optical element, afunctional film, or a layer including a plurality of elements selectedfrom the above examples can be used. Specific examples are layersincluding a display element that can be used for a display device, apixel circuit for driving the display element, a driver circuit of thepixel circuit, a color filter, a moisture-proof film, and a layerincluding a plurality of elements selected from the above examples.

<<Bonding Layer>>

There is no particular limitation on the bonding layer 30 as long as thebonding layer 30 bonds the first layer 13 and the base 25 to each other.

For example, an inorganic material, an organic resin, or the like can beused for the bonding layer 30.

Specifically, a glass layer with a melting point of 400° C. or lower,preferably 300° C. or lower, an adhesive, or the like can be used.

For the bonding layer 30, a light curable adhesive, a reactive curableadhesive, a heat curable adhesive, and/or an anaerobic adhesive can beused.

Specifically, an adhesive containing an epoxy resin, an acrylic resin, asilicone resin, a phenol resin, a polyimide resin, an imide resin, apolyvinyl chloride (PVC) resin, a polyvinyl butyral (PVB) resin, and anethylene vinyl acetate (EVA) resin, or the like can be used.

<<Base>>

There is no particular limitation on the base 25 as long as the base 25has heat resistance high enough to withstand a manufacturing process anda thickness and a size which can be used in a manufacturing apparatus.

A material used for the base 25 can be similar to that used for thefirst substrate 11, for example.

<<Separation Trigger>>

In the processed member 80, the separation triggers 13 s may be providedin the vicinity of the end portions of the bonding layer 30.

The separation triggers 13 s are formed by separating part of the firstlayer 13 from the first substrate 11.

Part of the first layer 13 can be separated from the separation layer 12by inserting a sharp tip into the first layer 13 from the firstsubstrate 11 side or by a method using a laser or the like (e.g., alaser ablation method). Accordingly, the separation trigger 13 s can beformed.

<Structural Example 2 of Processed Member>

A modification example of a structure of the processed member that canbe used in the stack manufacturing apparatus of one embodiment isdescribed with reference to FIGS. 12B1 and 12B2.

The processed member 90 is different from the processed member 80 inthat the other surface of the bonding layer 30 is in contact with onesurface of the second layer 23 instead of the base 25. Thus, differentportions will be described in detail below. The above description isreferred to for portions where the same structures can be employed.Specifically, the processed member 90 includes the first substrate 11 onwhich the first separation layer 12 and the first layer 13 whose onesurface is in contact with the first separation layer 12 are formed, thesecond substrate 21 on which the second separation layer 22 and thesecond layer 23 whose other surface is in contact with the secondseparation layer 22 are formed, and the bonding layer 30 whose onesurface is in contact with the other surface of the first layer 13 andwhose other surface is in contact with the one surface of the secondseparation layer 23.

<<Second Substrate>>

As the second substrate 21, the same substrate as the first substrate 11can be used. Alternatively, the second substrate 21 and the firstsubstrate 11 do not need to have the same structure.

<<Second Separation Layer>>

As the second separation layer 22, the same layer as the firstseparation layer 12 can be used. Alternatively, the second separationlayer 22 and the first separation layer 12 do not need to have the samestructure.

<<Second Layer to be Separated>>

The second layer 23 can have the same structure as the first layer 13.Alternatively, the second layer 23 can have a structure different fromthat of the first layer 13.

Specifically, a structure may be employed in which the first layer 13includes a functional circuit and the second layer 23 includes afunctional layer that prevents diffusion of impurities into thefunctional circuit.

Specifically, the first layer 13 may include a light-emitting elementthat emits light to the second layer 23, a pixel circuit for driving thelight-emitting element, and a driver circuit of the pixel circuit, andthe second layer 23 may include a color filter that transmits part oflight emitted from the light-emitting element and a moisture-proof filmthat prevents unintended diffusion of impurities into the light-emittingelement. Note that the processed member with such a structure can beused for a stack that can be used as a flexible display device.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 5

In this embodiment, description is given of an example of a flexiblelight-emitting device (light-emitting panel) that can be manufacturedwith the use of any of the stack manufacturing apparatuses described inEmbodiments 2 and 3.

Specific Example 1

FIG. 13A is a plan view of a flexible light-emitting panel, and FIG. 13Bis an example of a cross-sectional view taken along dashed-dotted lineG1-G2 in FIG. 13A. In addition, examples of another cross-sectional vieware illustrated in FIGS. 17A and 17B.

The light-emitting panel illustrated in FIG. 13B includes an elementlayer 1301, an adhesive layer 1305, and a substrate 1303. The elementlayer 1301 includes a substrate 1401, an adhesive layer 1403, aninsulating layer 1405, a transistor 1440, a conductive layer 1357, aninsulating layer 1407, an insulating layer 1409, a light-emittingelement 1430, an insulating layer 1411, a sealing layer 1413, aninsulating layer 1461, a coloring layer 1459, a light-blocking layer1457, and an insulating layer 1455.

The conductive layer 1357 is electrically connected to an FPC (flexibleprinted circuit) 1308 via a connector 1415.

The light-emitting element 1430 includes a lower electrode 1431, an ELlayer 1433, and an upper electrode 1435. The lower electrode 1431 iselectrically connected to a source electrode or a drain electrode of thetransistor 1440. An end portion of the lower electrode 1431 is coveredwith the insulating layer 1411. The light-emitting element 1430 has atop emission structure. The upper electrode 1435 has alight-transmitting property and transmits light emitted from the ELlayer 1433.

Note that as illustrated in FIG. 17B, with the use of an EL layer 1433Aand an EL layer 1433B, the EL layers may be separately provided for eachpixel. In this case, different colors are emitted in the pixels;therefore, the coloring layer 1459 is not necessarily provided.

The coloring layer 1459 is provided to overlap with the light-emittingelement 1430, and the light-blocking layer 1457 is provided to overlapwith the insulating layer 1411. The coloring layer 1459 and thelight-blocking layer 1457 are covered with the insulating layer 1461. Aspace between the light-emitting element 1430 and the insulating layer1461 is filled with the sealing layer 1413.

The light-emitting panel includes a plurality of transistors in a lightextraction portion 1304 and a driver circuit portion 1306. Thetransistor 1440 is provided over the insulating layer 1405. Theinsulating layer 1405 and the substrate 1401 are bonded to each otherwith the adhesive layer 1403. The insulating layer 1455 and thesubstrate 1303 are bonded to each other with the adhesive layer 1305. Itis preferable to use films with low water permeability for theinsulating layer 1405 and the insulating layer 1455, in which case animpurity such as water can be prevented from entering the light-emittingelement 1430 or the transistor 1440, leading to improved reliability ofthe light-emitting panel. The adhesive layer 1403 can be formed using amaterial similar to that of the adhesive layer 1305.

The light-emitting panel in Specific example 1 can be manufactured inthe following manner: the insulating layer 1405, the transistor 1440,and the light-emitting element 1430 are formed over a formationsubstrate with high heat resistance; the formation substrate isseparated; and the insulating layer 1405, the transistor 1440, and thelight-emitting element 1430 are transferred to the substrate 1401 andbonded thereto with the adhesive layer 1403. The light-emitting panel inSpecific example 1 can be manufactured in the following manner: theinsulating layer 1455, the coloring layer 1459, and the light-blockinglayer 1457 are formed over a formation substrate with high heatresistance; the formation substrate is separated; and the insulatinglayer 1455, the coloring layer 1459, and the light-blocking layer 1457are transferred to the substrate 1303 and bonded thereto with theadhesive layer 1305.

In the case where a material with high water permeability and low heatresistance (e.g., resin) is used for a substrate, it is impossible toexpose the substrate to high temperature in the manufacturing process.Thus, there is a limitation on conditions for forming a transistor andan insulating film over the substrate. In the manufacturing method ofthis embodiment, a transistor and the like can be formed over aformation substrate having high heat resistance; thus, a highly reliabletransistor and an insulating film with sufficiently low waterpermeability can be formed. Then, the transistor and the insulating filmare transferred to the substrate 1303 or the substrate 1401, whereby ahighly reliable light-emitting panel can be manufactured. Thus, with oneembodiment of the present invention, a thin or/and lightweightlight-emitting device with high reliability can be provided. Details ofthe manufacturing method will be described later.

The substrate 1303 and the substrate 1401 are each preferably formedusing a material with high toughness. Thus, a display device with highimpact resistance that is less likely to be broken can be provided. Forexample, when the substrate 1303 is an organic resin substrate and thesubstrate 1401 is a substrate formed using a thin metal material or athin alloy material, a light-emitting panel that is more lightweight andless likely to be broken as compared with the case where a glasssubstrate is used can be provided.

A metal material and an alloy material, which have high thermalconductivity, are preferred because they can easily conduct heat to thewhole substrate and accordingly can prevent a local temperature rise inthe light-emitting panel. The thickness of a substrate using a metalmaterial or an alloy material is preferably greater than or equal to 10μm and less than or equal to 200 μm, further preferably greater than orequal to 20 μm and less than or equal to 50 μm.

Further, when a material with high thermal emissivity is used for thesubstrate 1401, the surface temperature of the light-emitting panel canbe prevented from rising, leading to prevention of breakage or adecrease in reliability of the light-emitting panel. For example, thesubstrate 1401 may have a stacked-layer structure of a metal substrateand a layer with high thermal emissivity (the layer can be formed usinga metal oxide or a ceramic material, for example).

Specific Example 2

FIG. 14A illustrates another example of the light extraction portion1304 in the light-emitting panel.

The light extraction portion 1304 illustrated in FIG. 14A includes thesubstrate 1303, the adhesive layer 1305, a substrate 1402, theinsulating layer 1405, the transistor 1440, the insulating layer 1407, aconductive layer 1408, an insulating layer 1409 a, an insulating layer1409 b, the light-emitting element 1430, the insulating layer 1411, thesealing layer 1413, and the coloring layer 1459.

The light-emitting element 1430 includes the lower electrode 1431, theEL layer 1433, and the upper electrode 1435. The lower electrode 1431 iselectrically connected to the source electrode or the drain electrode ofthe transistor 1440 via the conductive layer 1408. An end portion of thelower electrode 1431 is covered with the insulating layer 1411. Thelight-emitting element 1430 has a bottom emission structure. The lowerelectrode 1431 has a light-transmitting property and transmits lightemitted from the EL layer 1433.

The coloring layer 1459 is provided to overlap with the light-emittingelement 1430, and light emitted from the light-emitting element 1430 isextracted from the substrate 1303 side through the coloring layer 1459.A space between the light-emitting element 1430 and the substrate 1402is filled with the sealing layer 1413. The substrate 1402 can be formedusing a material similar to that of the substrate 1401.

Specific Example 3

FIG. 14B illustrates another example of the light-emitting panel.

The light-emitting panel illustrated in FIG. 14B includes the elementlayer 1301, the adhesive layer 1305, and the substrate 1303. The elementlayer 1301 includes the substrate 1402, the insulating layer 1405, aconductive layer 1510 a, a conductive layer 1510 b, a plurality oflight-emitting elements, the insulating layer 1411, a conductive layer1412, and the sealing layer 1413.

The conductive layer 1510 a and the conductive layer 1510 b, which areexternal connection electrodes of the light-emitting panel, can each beelectrically connected to an FPC or the like.

The light-emitting element 1430 includes the lower electrode 1431, theEL layer 1433, and the upper electrode 1435. An end portion of the lowerelectrode 1431 is covered with the insulating layer 1411. Thelight-emitting element 1430 has a bottom emission structure. The lowerelectrode 1431 has a light-transmitting property and transmits lightemitted from the EL layer 1433. The conductive layer 1412 iselectrically connected to the lower electrode 1431.

The substrate 1303 may have, as a light extraction structure, ahemispherical lens, a micro lens array, a film provided with an unevensurface structure, a light diffusing film, or the like. For example, alight extraction structure can be formed by attaching the above lens orfilm to a resin substrate with an adhesive or the like havingsubstantially the same refractive index as the substrate or the lens orfilm.

The conductive layer 1412 is preferably, though not necessarily,provided because voltage drop due to the resistance of the lowerelectrode 1431 can be inhibited. In addition, for a similar purpose, aconductive layer electrically connected to the upper electrode 1435 maybe provided over the insulating layer 1411.

The conductive layer 1412 can be a single layer or a stacked layerformed using a material selected from copper, titanium, tantalum,tungsten, molybdenum, chromium, neodymium, scandium, nickel, oraluminum, an alloy material containing any of these materials as itsmain component, or the like. The thickness of the conductive layer 1412can be greater than or equal to 0.1 μm and less than or equal to 3 μm,preferably greater than or equal to 0.1 μm and less than or equal to 0.5μm.

When a paste (e.g., silver paste) is used as a material for theconductive layer electrically connected to the upper electrode 1435,metal particles forming the conductive layer aggregate; therefore, thesurface of the conductive layer is rough and has many gaps. Thus, it isdifficult for the EL layer 1433 to completely cover the conductivelayer, accordingly, the upper electrode and the conductive layer areelectrically connected to each other easily, which is preferable.

<Examples of Materials>

Next, materials and the like that can be used for the light-emittingpanel are described. Note that description of the components alreadydescribed in this embodiment is omitted.

The element layer 1301 includes at least a light-emitting element. Asthe light-emitting element, a self-luminous element can be used, and anelement whose luminance is controlled by current or voltage is includedin the category of the light-emitting element. For example, alight-emitting diode (LED), an organic EL element, an inorganic ELelement, or the like can be used.

The element layer 1301 may further include a transistor for driving thelight-emitting element, a touch sensor, or the like.

The structure of the transistors in the light-emitting panel is notparticularly limited. For example, a forward staggered transistor or aninverted staggered transistor may be used. A top-gate transistor or abottom-gate transistor may be used. A semiconductor material used forthe transistors is not particularly limited, and for example, silicon orgermanium can be used. Alternatively, an oxide semiconductor containingat least one of indium, gallium, and zinc, such as an In—Ga—Zn-basedmetal oxide, may be used.

There is no particular limitation on the state of a semiconductormaterial used for the transistors, and an amorphous semiconductor or asemiconductor having crystallinity (a microcrystalline semiconductor, apolycrystalline semiconductor, a single-crystal semiconductor, or asemiconductor partly including crystal regions) may be used. It ispreferable that a semiconductor having crystallinity be particularlyused, in which case deterioration of the transistor characteristics canbe suppressed.

The light-emitting element included in the light-emitting panel includesa pair of electrodes (the lower electrode 1431 and the upper electrode1435); and the EL layer 1433 between the pair of electrodes. One of thepair of electrodes functions as an anode and the other functions as acathode.

The light-emitting element may have any of a top emission structure, abottom emission structure, and a dual emission structure. A conductivefilm that transmits visible light is used as the electrode through whichlight is extracted. A conductive film that reflects visible light ispreferably used as the electrode through which light is not extracted.

The conductive film that transmits visible light can be formed using,for example, indium oxide, indium tin oxide (ITO), indium zinc oxide,zinc oxide, or zinc oxide to which gallium is added. Alternatively, afilm of a metal material such as gold, silver, platinum, magnesium,nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium,or titanium; an alloy containing any of these metal materials; or anitride of any of these metal materials (e.g., titanium nitride) can beformed thin so as to have a light-transmitting property. Alternatively,a stack of any of the above materials can be used as the conductivefilm. For example, a stacked film of ITO and an alloy of silver andmagnesium is preferably used, in which case conductivity can beincreased. Further alternatively, graphene or the like may be used.

For the conductive film that reflects visible light, for example, ametal material such as aluminum, gold, platinum, silver, nickel,tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium or analloy containing any of these metal materials can be used. Lanthanum,neodymium, germanium, or the like may be added to the metal material orthe alloy. An alloy containing aluminum (an aluminum alloy) such as analloy of aluminum and titanium, an alloy of aluminum and nickel, or analloy of aluminum and neodymium; or an alloy containing silver such asan alloy of silver and copper, an alloy of silver, palladium, and,copper or an alloy of silver and magnesium can be used for theconductive film. An alloy of silver and copper is preferable because ofits high heat resistance. Furthermore, when a metal film or a metaloxide film is stacked in contact with an aluminum alloy film, oxidationof the aluminum alloy film can be inhibited. Examples of a material forthe metal film or the metal oxide film are titanium and titanium oxide.Alternatively, the above conductive film that transmits visible lightand a film containing a metal material may be stacked. For example, astacked film of silver and ITO or a stacked film of an alloy of silverand magnesium and ITO can be used.

Each of the electrodes can be formed by an evaporation method or asputtering method. Alternatively, a discharging method such as an inkjetmethod, a printing method such as a screen printing method, or a platingmethod may be used.

When a voltage higher than the threshold voltage of the light-emittingelement is applied between the lower electrode 1431 and the upperelectrode 1435, holes are injected to the EL layer 1433 from the anodeside and electrons are injected to the EL layer 1433 from the cathodeside. The injected electrons and holes are recombined in the EL layer1433 and a light-emitting substance contained in the EL layer 1433 emitslight.

The EL layer 1433 includes at least a light-emitting layer. In additionto the light-emitting layer, the EL layer 1433 may further include oneor more layers containing any of a substance with a high hole-injectionproperty, a substance with a high hole-transport property, ahole-blocking material, a substance with a high electron-transportproperty, a substance with a high electron-injection property, asubstance with a bipolar property (a substance with a highelectron-transport property and a hole-transport property), and thelike.

For the EL layer 1433, either a low molecular compound or a highmolecular compound can be used, and an inorganic compound may also beused. Each of the layers included in the EL layer 1433 can be formed byany of the following methods: an evaporation method (including a vacuumevaporation method), a transfer method, a printing method, an inkjetmethod, a coating method, and the like.

In the element layer 1301, the light-emitting element is preferablyprovided between a pair of insulating films with low water permeability.Thus, an impurity such as water can be inhibited from entering thelight-emitting element, leading to inhibition of a decrease in thereliability of the light-emitting device.

As an insulating film with low water permeability, a film containingnitrogen and silicon (e.g., a silicon nitride film or a silicon nitrideoxide film), a film containing nitrogen and aluminum (e.g., an aluminumnitride film), or the like can be used. Alternatively, a silicon oxidefilm, a silicon oxynitride film, an aluminum oxide film, or the like canbe used.

For example, the water vapor transmittance of the insulating film withlow water permeability is lower than or equal to 1×10⁻⁵ [g/m²·day],preferably lower than or equal to 1×10⁻⁶ [g/m²·day], further preferablylower than or equal to 1×10⁻⁷ [g/m²·day], still further preferably lowerthan or equal to 1×10⁻⁸ [g/m²·day].

The substrate 1303 has a light-transmitting property and transmits atleast light emitted from the light-emitting element included in theelement layer 1301. The substrate 1303 has flexibility. The refractiveindex of the substrate 1303 is higher than that of the air.

An organic resin, which has a specific gravity smaller than that ofglass, is preferably used for the substrate 1303, in which case thelight-emitting device can be more lightweight as compared with the casewhere glass is used.

Examples of a material having flexibility and a light-transmittingproperty with respect to visible light include glass that is thin enoughto have flexibility, polyester resins such as polyethylene terephthalate(PET) and polyethylene naphthalate (PEN), a polyacrylonitrile resin, apolyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC)resin, a polyethersulfone (PES) resin, a polyamide resin, a cycloolefinresin, a polystyrene resin, a polyamide imide resin, and a polyvinylchloride resin. In particular, a material whose thermal expansioncoefficient is low is preferred, and for example, a polyamide imideresin, a polyimide resin, or PET can be suitably used. A substrate inwhich a glass fiber is impregnated with an organic resin or a substratewhose thermal expansion coefficient is reduced by mixing an organicresin with an inorganic filler can also be used.

The substrate 1303 may have a stacked-layer structure of a layer of anyof the above-described materials and a hard coat layer (e.g., a siliconnitride layer) which protects a surface of the light-emitting devicefrom damage or the like, a layer (e.g., an aramid resin layer) which candisperse pressure, or the like. Furthermore, to suppress a decrease inthe lifetime of the light-emitting element due to moisture and the like,the insulating film with low water permeability may be included in thestacked structure.

The adhesive layer 1305 has a light-transmitting property and transmitsat least light emitted from the light-emitting element included in theelement layer 1301. The refractive index of the adhesive layer 1305 ishigher than that of the air.

For the adhesive layer 1305, a resin that is curable at room temperature(e.g., a two-component-mixture-type resin), a light curable resin, athermosetting resin, or the like can be used. Examples of such resinsinclude an epoxy resin, an acrylic resin, a silicone resin, and a phenolresin. In particular, a material with low moisture permeability, such asan epoxy resin, is preferred.

The resin may include a drying agent. For example, a substance thatadsorbs moisture by chemical adsorption, such as oxide of an alkalineearth metal (e.g., calcium oxide or barium oxide), can be used.Alternatively, a substance that adsorbs moisture by physical adsorption,such as zeolite or silica gel, may be used. The drying agent ispreferably included because it can inhibit an impurity such as moisturefrom entering the light-emitting element, thereby improving thereliability of the light-emitting device.

In addition, it is preferable to mix a filler with a high refractiveindex (e.g., titanium oxide) into the resin, in which case theefficiency of light extraction from the light-emitting element can beimproved.

The adhesive layer 1305 may also include a scattering member forscattering light. For example, the adhesive layer 1305 can be a mixtureof the above-described resin and particles having a refractive indexdifferent from that of the resin. The particles function as thescattering member for scattering light.

The difference in refractive index between the resin and the particleswith a refractive index different from that of the resin is preferably0.1 or more, further preferably 0.3 or more. Specifically, an epoxyresin, an acrylic resin, an imide resin, a silicone resin, or the likecan be used as the resin, and titanium oxide, barium oxide, zeolite, orthe like can be used as the particles.

Particles of titanium oxide or barium oxide are preferable because theyscatter light excellently. When zeolite is used, it can adsorb watercontained in the resin and the like, thereby improving the reliabilityof the light-emitting element.

The insulating layer 1405 and the insulating layer 1455 can each beformed using an inorganic insulating material. It is particularlypreferable to use the insulating film with low water permeability, inwhich case a highly reliable light-emitting panel can be provided.

The insulating layer 1407 has an effect of inhibiting diffusion ofimpurities into a semiconductor included in the transistor. As theinsulating layer 1407, an inorganic insulating film such as a siliconoxide film, a silicon oxynitride film, or an aluminum oxide film can beused.

As each of the insulating layers 1409, 1409 a, and 1409 b, an insulatingfilm with a planarization function is preferably selected in order toreduce surface unevenness due to the transistor or the like. Forexample, an organic material such as a polyimide resin, an acrylicresin, or a benzocyclobutene-based resin can be used. Other than suchorganic materials, it is also possible to use a low-dielectric constantmaterial (a low-k material) or the like. Note that a plurality ofinsulating films formed of these materials or inorganic insulating filmsmay be stacked.

The insulating layer 1411 is provided to cover an end portion of thelower electrode 1431. In order that the insulating layer 1411 befavorably covered with the EL layer 1433 and the upper electrode 1435formed thereover, a side wall of the insulating layer 1411 preferablyhas a tilted surface with continuous curvature.

As a material for the insulating layer 1411, a resin or an inorganicinsulating material can be used. As the resin, for example, a polyimideresin, a polyamide resin, an acrylic resin, a siloxane resin, an epoxyresin, or a phenol resin can be used. In particular, either a negativephotosensitive resin or a positive photosensitive resin is preferablyused for easy formation of the insulating layer 1411.

There is no particular limitation on the method for forming theinsulating layer 1411; a photolithography method, a sputtering method,an evaporation method, a droplet discharging method (e.g., an inkjetmethod), a printing method (e.g., a screen printing method or an off-setprinting method), or the like may be used.

For the sealing layer 1413, a resin that is curable at room temperature(e.g., a two-component-mixture-type resin), a light curable resin, athermosetting resin, or the like can be used. For example, a polyvinylchloride (PVC) resin, an acrylic resin, a polyimide resin, an epoxyresin, a silicone resin, a polyvinyl butyral (PVB) resin, an ethylenevinyl acetate (EVA) resin, or the like can be used. A drying agent maybe contained in the sealing layer 1413. In the case where light emittedfrom the light-emitting element 1430 is extracted outside through thesealing layer 1413, the sealing layer 1413 preferably includes a fillerwith a high refractive index or a scattering member. Materials for thedrying agent, the filler with a high refractive index, and thescattering member are similar to those that can be used for the adhesivelayer 1305.

The conductive layer 1357 can be formed using the same material and thesame step as a conductive layer included in the transistor or thelight-emitting element. For example, the conductive layer can be formedto have a single-layer structure or a stacked-layer structure using anyof metal materials such as molybdenum, titanium, chromium, tantalum,tungsten, aluminum, copper, neodymium, and scandium, and an alloymaterial containing any of these elements. Each of the conductive layersmay be formed using a conductive metal oxide. As the conductive metaloxide, indium oxide (e.g., In₂O₃), tin oxide (e.g., SnO₂), zinc oxide(ZnO). ITO, indium zinc oxide (e.g., In₂O₃—ZnO), or any of these metaloxide materials in which silicon oxide is contained can be used.

Each of the conductive layers 1408, 1412, 1510 a, and 1510 b can also beformed using any of the above-described metal materials, alloymaterials, and conductive metal oxides.

For the connector 1415, it is possible to use a paste-like or sheet-likematerial which is obtained by mixture of metal particles and athermosetting resin and for which anisotropic electric conductivity isprovided by thermocompression bonding. As the metal particles, particlesin which two or more kinds of metals are layered, for example, nickelparticles coated with gold are preferably used.

The coloring layer 1459 is a colored layer that transmits light in aspecific wavelength range. For example, a red (R) color filter fortransmitting light in a red wavelength range, a green (G) color filterfor transmitting light in a green wavelength range, a blue (B) colorfilter for transmitting light in a blue wavelength range, or the likecan be used. Each coloring layer is formed in a desired position withany of various materials by a printing method, an inkjet method, anetching method using a photolithography method, or the like.

The light-blocking layer 1457 is provided between the adjacent coloringlayers 1459. The light-blocking layer 1457 blocks light emitted from theadjacent light-emitting element, thereby inhibiting color mixturebetween adjacent pixels. Here, the coloring layer 1459 is provided suchthat its end portion overlaps with the light-blocking layer 1457,whereby light leakage can be reduced. The light-blocking layer 1457 canbe formed using a material that blocks light emitted from thelight-emitting element, for example, a metal material, a resin materialincluding a pigment or a dye, or the like. Note that the light-blockinglayer 1457 is preferably provided in a region other than the lightextraction portion 1304, such as the driver circuit portion 1306, asillustrated in FIG. 13B, in which case undesired leakage of guided lightor the like can be inhibited.

The insulating layer 1461 covering the coloring layer 1459 and thelight-blocking layer 1457 is preferably provided because it can inhibitan impurity such as a pigment included in the coloring layer 1459 or thelight-blocking layer 1457 from diffusing into the light-emitting elementor the like. For the insulating layer 1461, a light-transmittingmaterial is used, and an inorganic insulating material or an organicinsulating material can be used. The insulating film with low waterpermeability may be used for the insulating layer 1461.

<Manufacturing Method Example>

Next, an example of a method for manufacturing a light-emitting devicewill be described with reference to FIGS. 15A to 15C and FIGS. 16A to16C. Here, the manufacturing method is described using thelight-emitting device of Specific example 1 (FIG. 13B) as an example.

First, a separation layer 1503 is formed over a formation substrate1501, and the insulating layer 1405 is formed over the separation layer1503. Next, the transistor 1440, the conductive layer 1357, theinsulating layer 1407, the insulating layer 1409, the light-emittingelement 1430, and the insulating layer 1411 are formed over theinsulating layer 1405. An opening is formed in the insulating layers1411, 1409, and 1407 to expose the conductive layer 1357 (see FIG. 15A).

In addition, a separation layer 1507 is formed over a formationsubstrate 1505, and the insulating layer 1455 is formed over theseparation layer 1507. Next, the light-blocking layer 1457, the coloringlayer 1459, and the insulating layer 1461 are formed over the insulatinglayer 1455 (see FIG. 15B).

The formation substrate 1501 and the formation substrate 1505 can eachbe a hard substrate such as a glass substrate, a quartz substrate, asapphire substrate, a ceramic substrate, or a metal substrate.

For the glass substrate, for example, a glass material such asaluminosilicate glass, aluminoborosilicate glass, or barium borosilicateglass can be used. When the temperature of heat treatment performedlater is high, a substrate having a strain point of 730° C. or higher ispreferably used. Alternatively, crystallized glass or the like may beused.

In the case where a glass substrate is used as the formation substrate,an insulating film such as a silicon oxide film, a silicon oxynitridefilm, a silicon nitride film, or a silicon nitride oxide film ispreferably formed between the formation substrate and the separationlayer, in which case contamination from the glass substrate can beprevented.

The separation layer 1503 and the separation layer 1507 each have asingle-layer structure or a stacked-layer structure containing anelement selected from tungsten, molybdenum, titanium, tantalum, niobium,nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium,iridium, and silicon; an alloy material containing any of the elements;or a compound material containing any of the elements. A crystalstructure of a layer containing silicon may be amorphous, microcrystal,or polycrystal.

The separation layer can be formed by a sputtering method, a plasma CVDmethod, a coating method, a printing method, or the like. Note that acoating method includes a spin coating method, a droplet dischargemethod, and a dispensing method.

In the case where the separation layer has a single-layer structure, atungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is preferably formed. Alternatively, a layercontaining an oxide or an oxynitride of tungsten, a layer containing anoxide or an oxynitride of molybdenum, or a layer containing an oxide oran oxynitride of a mixture of tungsten and molybdenum may be formed.Note that the mixture of tungsten and molybdenum corresponds to an alloyof tungsten and molybdenum, for example.

In the case where the separation layer is formed to have a stacked-layerstructure including a layer containing tungsten and a layer containingan oxide of tungsten, the layer containing an oxide of tungsten may beformed as follows: the layer containing tungsten is formed first and aninsulating film formed of an oxide is formed thereover, so that thelayer containing an oxide of tungsten is formed at the interface betweenthe tungsten layer and the insulating film. Alternatively, the layercontaining an oxide of tungsten may be formed by performing thermaloxidation treatment, oxygen plasma treatment, nitrous oxide (N₂O) plasmatreatment, treatment with a highly oxidizing solution such as ozonewater, or the like on the surface of the layer containing tungsten.Plasma treatment or heat treatment may be performed in an atmosphere ofoxygen, nitrogen, or nitrous oxide alone, or a mixed gas of any of thesegasses and another gas. Surface condition of the separation layer ischanged by the plasma treatment or heat treatment, whereby adhesionbetween the separation layer and the insulating layer formed later canbe controlled.

Note that the insulating layer preferably has a single-layer structureor a stacked-layer structure including any of a silicon nitride film, asilicon oxynitride film, a silicon nitride oxide film, and the like.

Each of the insulating layers can be formed by a sputtering method, aplasma CVD method, a coating method, a printing method, or the like. Forexample, the insulating layer is formed at higher than or equal to 250°C. and lower than or equal to 400° C. by a plasma CVD method, wherebythe insulating layer can be a dense film with very low waterpermeability.

Then, a material for the sealing layer 1413 is applied to a surface ofthe formation substrate 1505 over which the coloring layer 1459 and thelike are formed or a surface of the formation substrate 1501 over whichthe light-emitting element 1430 and the like are formed, and theformation substrate 1501 and the formation substrate 1505 are bonded toeach other with the sealing layer 1413 positioned therebetween (see FIG.15C).

Next, the formation substrate 1501 is separated, and the exposedinsulating layer 1405 and the substrate 1401 are bonded to each otherwith the adhesion layer 1403. Furthermore, the formation substrate 1505is separated, and the exposed insulating layer 1455 and the substrate1303 are bonded to each other with the adhesive layer 1305. Although thesubstrate 1303 does not overlap with the conductive layer 1357 in FIG.16A, the substrate 1303 may overlap with the conductive layer 1357.

Here, the substrate 1401 corresponds to the support 41 described inEmbodiment 1 and the substrate 1303 corresponds to the second support42.

The substrate 1303 or the substrate 1401 can be supplied by the supportsupply apparatus described in Embodiment 1. In addition, the step ofseparating the formation substrate 1501, the step of bonding thesubstrate 1401, the step of separating the formation substrate 1505, andthe step of bonding the substrate 1303 can be performed with the stackmanufacturing apparatus described in Embodiment 2 or Embodiment 3.

Note that in the separation step using any of the stack manufacturingapparatuses that are embodiments of the present invention, variousseparation methods can be performed on the formation substrate. Forexample, when a layer including a metal oxide film is formed as theseparation layer on the side in contact with the layer to be separated,the metal oxide film is embrittled by crystallization, whereby the layerto be separated can be separated from the formation substrate.Alternatively, when an amorphous silicon film containing hydrogen isformed as the separation layer between the formation substrate havinghigh heat resistance and the layer to be separated, the amorphoussilicon film is removed by laser light irradiation or etching, wherebythe layer to be separated can be separated from the formation substrate.Alternatively, after a layer including a metal oxide film is formed asthe separation layer on the side in contact with the layer to beseparated, the metal oxide film is embrittled by crystallization, andpart of the separation layer is removed by etching using a solution or afluoride gas such as NF₃, BrF₃, or ClF₃, whereby the separation can beperformed at the embrittled metal oxide film. Furthermore, a method maybe used in which a film containing nitrogen, oxygen, hydrogen, or thelike (for example, an amorphous silicon film containing hydrogen, analloy film containing hydrogen, an alloy film containing oxygen, or thelike) is used as the separation layer, and the separation layer isirradiated with laser light to release the nitrogen, oxygen, or hydrogencontained in the separation layer as a gas, thereby promoting separationbetween the layer to be separated and the formation substrate.Alternatively, it is possible to use a method in which the formationsubstrate provided with the layer to be separated is removedmechanically or by etching using a solution or a fluoride gas such asNF₃, BrF₃, or ClF₃, or the like. In this case, the separation layer isnot necessarily provided.

Furthermore, the separation step can be conducted easily by combinationof the above-described separation methods. In other words, separationcan be performed with physical force (by a machine or the like) afterperforming laser light irradiation, etching on the separation layer witha gas, a solution, or the like, or mechanical removal with a sharpknife, scalpel or the like so that the separation layer and the layer tobe separated can be easily separated from each other. The stepcorresponds to the step of forming the separation trigger in thisspecification. The separation trigger is preferably formed in each ofthe processed member and the stack which are processed with any of thestack manufacturing apparatuses that are embodiments of the presentinvention.

Separation of the layer to be separated from the formation substrate maybe carried out by filling the interface between the separation layer andthe layer to be separated with a liquid. Furthermore, the separation maybe conducted while pouring a liquid such as water.

As another separation method, in the case where the separation layer isformed using tungsten, it is preferable that the separation be performedwhile etching the separation layer using a mixed solution of ammoniumwater and a hydrogen peroxide solution.

Note that the separation layer is not necessary in the case whereseparation at the interface between the formation substrate and thelayer to be separated is possible. For example, glass is used as theformation substrate, an organic resin such as polyimide is formed incontact with the glass, and an insulating film, a transistor, and thelike are formed over the organic resin. In this case, heating theorganic resin enables the separation at the interface between theformation substrate and the organic resin. Alternatively, separation atthe interface between a metal layer and the organic resin may beperformed in the following manner; the metal layer is provided betweenthe formation substrate and the organic resin and current is made toflow in the metal layer so that the metal layer is heated.

Lastly, an opening is formed in the insulating layer 1455 and thesealing layer 1413 to expose the conductive layer 1357 (see FIG. 16B).In the case where the substrate 1303 overlaps with the conductive layer1357, the opening is formed also in the substrate 1303 and the adhesivelayer 1305 (see FIG. 16C). The mechanism for forming the opening is notparticularly limited and may be, for example, a laser ablation method,an etching method, an ion beam sputtering method, or the like. Asanother method, a slit may be made in a film over the conductive layer1357 with a sharp knife or the like and part of the film may beseparated by physical force.

In the above-described manner, the light-emitting panel can bemanufactured.

Note that a touch sensor or a touch panel may be provided. For example,FIG. 18 illustrates a case where a touch panel is incorporated in thelight-emitting panel in FIGS. 13A and 13B. A touch sensor may bedirectly formed on the substrate 1303; alternatively, the touch panel9999 formed on another substrate may be placed over the substrate 1303.

Note that although the case where the light-emitting element is used asa display element is illustrated here, one embodiment of the presentinvention is not limited thereto. Various display elements can be used.For example, in this specification and the like, a display element, adisplay device which is a device including a display element, alight-emitting element, and a light-emitting device which is a deviceincluding a light-emitting element can employ a variety of modes or caninclude a variety of elements. Examples of a display element, a displaydevice, a light-emitting element, or a light-emitting device include anEL (electroluminescent) element (e.g., an EL element including organicand inorganic materials, an organic EL element, or an inorganic ELelement), an LED (e.g., a white LED, a red LED, a green LED, or a blueLED), a transistor (a transistor which emits light depending oncurrent), an electron emitter, a liquid crystal element, electronic ink,an electrophoretic element, a grating light valve (GLV), a plasmadisplay panel (PDP), a micro electro mechanical system (MEMS), a digitalmicromirror device (DMD), a digital micro shutter (DMS), MIRASOL(registered trademark), an interferometric modulator display (IMOD)element, an electrowetting element, a piezoelectric ceramic display, ora carbon nanotube, which are display media whose contrast, luminance,reflectivity, transmittance, or the like is changed by electromagneticaction. Examples of display devices having EL elements include an ELdisplay. Examples of a display device including an electron emitterinclude a field emission display (FED), an SED-type flat panel display(SED: surface-conduction electron-emitter display), and the like.Examples of display devices including liquid crystal elements include aliquid crystal display (e.g., a transmissive liquid crystal display, atransflective liquid crystal display, a reflective liquid crystaldisplay, a direct-view liquid crystal display, or a projection liquidcrystal display). Display devices having electronic ink orelectrophoretic elements include electronic paper and the like.

In this specification and the like, an active matrix method in which anactive element is included in a pixel or a passive matrix method inwhich an active element is not included in a pixel can be used.

In an active matrix method, as an active element (a non-linear element),not only a transistor but also various active elements (non-linearelements) can be used. For example, a metal insulator metal (MIM), athin film diode (TFD), or the like can also be used. Since such anelement has few number of manufacturing steps, manufacturing cost can bereduced or yield can be improved. Alternatively, since the size of theelement is small, the aperture ratio can be improved, so that powerconsumption can be reduced or higher luminance can be achieved.

As a method other than the active matrix method, the passive matrixmethod in which an active element (a non-linear element) is not used canalso be used. Since an active element (a non-linear element) is notused, the number of manufacturing steps is small, so that manufacturingcost can be reduced or the yield can be improved. Alternatively, sincean active element (a non-linear element) is not used, the aperture ratiocan be improved, so that power consumption can be reduced or higherluminance can be achieved, for example.

As described above, a light-emitting panel of this embodiment includestwo substrates; one is the substrate 1303 and the other is the substrate1401. The light-emitting device can be formed with two substrates evenwhen including a touch sensor. Owing to the use of the minimum number ofsubstrates, improvement in light extraction efficiency and improvementin clarity of display can be easily achieved.

Examples of the electronic devices to which the flexible light-emittingdevice that can be manufactured using the stack manufacturing apparatusof one embodiment of the present invention is applied include televisionsets (also referred to as televisions or television receivers), monitorsof computers or the like, cameras such as digital cameras or digitalvideo cameras, digital photo frames, mobile phones (also referred to ascellular phones or cellular phone devices), portable game consoles,portable information terminals, audio reproducing devices, large-sizedgame machines such as pachinko machines, and the like.

As examples of electronic devices including a display device withflexibility, the following can be given: television devices (alsoreferred to as televisions or television receivers), monitors ofcomputers or the like, cameras such as digital cameras or digital videocameras, digital photo frames, mobile phones (also referred to as mobilephones or mobile phone devices), portable game machines, portableinformation terminals, audio reproducing devices, large game machinessuch as pachinko machines, and the like.

In addition, a lighting device or a display device can be incorporatedalong a curved inside/outside wall surface of a house or a building or acurved interior/exterior surface of a car.

FIG. 19A illustrates an example of a mobile phone. A mobile phone 7400is provided with a display portion 7402 incorporated in a housing 7401,an operation button 7403, an external connection port 7404, a speaker7405, a microphone 7406, and the like. The mobile phone 7400 isfabricated using the display device for the display portion 7402.

When the display portion 7402 of the mobile phone 7400 illustrated inFIG. 19A is touched with a finger or the like, data can be input intothe mobile phone 7400. Operations such as making a call and inputting aletter can be performed by touch on the display portion 7402 with afinger or the like.

With the operation button 7403, power ON or OFF can be switched. Inaddition, types of images displayed on the display portion 7402 can beswitched; for example, switching images from a mail creation screen to amain menu screen is performed with the operation button 7403.

Here, the display portion 7402 includes a display device of oneembodiment of the present invention. Thus, the mobile phone can have acurved display portion and high reliability.

FIG. 19B is an example of a wristband-type display device. A portabledisplay device 7100 includes a housing 7101, a display portion 7102, anoperation button 7103, and a sending and receiving device 7104.

The portable display device 7100 can receive a video signal with thesending and receiving device 7104 and can display the received video onthe display portion 7102. In addition, with the sending and receivingdevice 7104, the portable display device 7100 can send an audio signalto another receiving device.

With the operation button 7103, power ON/OFF, switching displayedvideos, adjusting volume, and the like can be performed.

Here, the display portion 7102 includes a display device of oneembodiment of the present invention. Thus, the portable display devicecan have a curved display portion and high reliability.

FIGS. 19C and 19D each illustrate an example of a lighting device.Lighting devices 7210 and 7220 each include a stage 7201 provided withan operation switch 7203 and a light-emitting portion supported by thestage 7201.

A light-emitting portion 7212 included in the lighting device 7210illustrated in FIG. 19C has two convex-curved light-emitting portionssymmetrically placed. Thus, all directions can be illuminated with thelighting device 7210 as a center.

The lighting device 7220 illustrated in FIG. 19D includes aconcave-curved light-emitting portion 7222. This is suitable forilluminating a specific range because light emitted from thelight-emitting portion 7222 is collected to the front of the lightingdevice 7220.

The light-emitting portion included in each of the lighting devices 7210and 7220 is flexible; thus, the light-emitting portion may be fixed on aplastic member, a movable frame, or the like so that an emission surfaceof the light-emitting portion can be bent freely depending on theintended use.

The light-emitting portions included in the lighting devices 7210 and7220 each include a display device of one embodiment of the presentinvention. Thus, the lighting devices can have curved display portionsand high reliability.

FIG. 20A illustrates an example of a portable display device. A displaydevice 7300 includes a housing 7301, a display portion 7302, operationbuttons 7303, a display portion pull 7304, and a control portion 7305.

The display device 7300 includes a rolled flexible display portion 7302in the cylindrical housing 7301. The display portion 7302 includes afirst substrate provided with a light-blocking layer and the like and asecond substrate provided with a transistor and the like. The displayportion 7302 is rolled so that the second substrate is positionedagainst an inner wall of the housing 7301.

The display device 7300 can receive a video signal with the controlportion 7305 and can display the received video on the display portion7302. In addition, a battery is included in the control portion 7305.Moreover, a connector may be included in the control portion 7305 sothat a video signal or power can be supplied directly.

With the operation buttons 7303, power ON/OFF, switching of displayedvideos, and the like can be performed.

FIG. 20B illustrates a state in which the display portion 7302 is pulledout with the display portion pull 7304. Videos can be displayed on thedisplay portion 7302 in this state. In addition, the operation buttons7303 on the surface of the housing 7301 allow one-handed operation.

Note that a reinforcement frame may be provided for an edge portion ofthe display portion 7302 in order to prevent the display portion 7302from being curved when pulled out.

Note that in addition to this structure, a speaker may be provided forthe housing so that sound is output with an audio signal receivedtogether with a video signal.

The display portion 7302 includes a display device of one embodiment ofthe present invention. Thus, the display portion 7302 is a displaydevice which is flexible and highly reliable, which makes the displaydevice 7300 lightweight and highly reliable.

It is needless to say that one embodiment of the present invention isnot limited to the above-described electronic devices and lightingdevices as long as a display device of one embodiment of the presentinvention is included.

This embodiment can be implemented in an appropriate combination withany of the structures described in the other embodiments.

Embodiment 6

In this embodiment, description is given of an example of a flexiblelight-emitting device (light-emitting panel) that can be manufacturedwith the use of any of the stack manufacturing apparatuses described inEmbodiments 2 and 3.

FIGS. 21A and 21B are cross-sectional views illustrating structures of alight-emitting element and a light-emitting panel. FIG. 21A is across-sectional view illustrating a structure of a light-emittingelement with a WTC structure, and FIG. 21B is a cross-sectional viewillustrating a structure of a light-emitting panel provided with aplurality of light-emitting elements each with a WTC structure.

FIG. 22 is a photograph showing display quality of a display deviceincluding a light-emitting element with a WTC structure.

FIG. 23 is a graph showing changes over time in luminance normalizedwith respect to initial luminance, which are recognized when alight-emitting element with a WTC structure emits light continuously.

<Organic EL Display>

Organic EL (organic light-emitting diode (OLED)) is a light-emittingelement with a structure in which approximately submicron thin filmsincluding light-emitting organic materials (also referred to as an ELlayer) are sandwiched between electrodes, and also is a planarlight-emitting body.

Organic EL displays commercialized so far have been mainly manufacturedby a side-by-side method using a metal mask such as a pixel mask(hereinafter, referred to as a separate coloring mask) in a filmformation of an EL layer.

However, there is a limit on high resolution by the film formationmethod because it is difficult to form an opening with a pitch which isnarrower than the thickness of the separate coloring mask. Moreover,there is a problem in that there is a limit on a larger metal mask andit is difficult to manufacture a high-resolution and large-screendisplay. Thus, small and middle-sized displays with a resolution lessthan or equal to 250 ppi are first commercialized, and it is said thatthe upper limit of the resolution of the panel actually manufactured isapproximately 300 ppi.

Moreover, there are problems in that the use of the separate coloringmask makes it difficult to increase the yield in the manufacturingprocess and the manufacturing cost increases because the cost of a finemetal mask (FFM) increases as the resolution becomes high.

Furthermore, EL devices including a bottom emission display wereinitially on sale; however, in recent years, EL devices including a topemission have been mainly commercialized. A display with high colorpurity or an aperture considered, the top emission display is favorableto the small and middle-sized displays in the case where higherresolution and lower power consumption are planned.

Then, in order to develop a display which can have a high resolution andcan achieve more power saving and a longer lifetime than theconventional organic EL displays without using the separate coloringmask, a WTC structure is developed. The WTC structure refers to a “whitetandem, top emission and color filter” structure. The WTC structure isthe same as that of a general white color filter method except that awhite tandem is used in an OLED element. The EL device structure is atwo-stack tandem structure of a blue light emitting unit and a green andred light emitting unit. A microcavity structure and a color filter arecombined with the WTC structure, whereby a high-resolution panel can bemanufactured without using the separate coloring mask.

FIG. 21A shows a WTC structure, and FIG. 21B shows a conceptual diagramof a substrate structure. A reflective electrode (anode), a transparentelectrode, a B fluorescent unit, an intermediate layer, a G·Rphosphorescent unit, a semi-transmissive metal film (cathode), and acolor filter are sequentially stacked over a glass/FET.

With a top emission structure, the following advantages may be obtained.The high aperture can be kept without depending on a layout of an FETsubstrate, and a long lifetime of the panel can be achieved. Inaddition, with a cavity structure, luminance in the front directionincreases, so that high efficiency can be achieved. Moreover, with acavity structure and a color filter, a spectrum becomes sharp, and inaddition, color purity becomes high because unnecessary wavelength lightcan be reduced by the color filter; thus, high color reproducibility canbe achieved. As a result, the NTSC ratio can be 95% or more.

Table 1 shows specifications of display performance of a display devicehaving a WTC structure and specifications of display performance of adisplay device manufactured by a side-by-side method. Table 2 showsspecifications of a structure of a display device having a WTC structureand specifications of a structure of a display device manufactured by aside-by-side method.

TABLE 1 WTC Structure White Tandem OLED + CF Screen Size 13.3 inch PixelNumber 7680 × RGB × 4320 Definition 664 ppi Pixel Size 12.75 μm × RGB ×38.25 μm OLED Structure White Pixel Alignment Stripe Aperture Ratio R =G = B = 44.3%

TABLE 2 WTC White Tandem OLED + CF Sealing Hollow sealing Polarizer Nopolarizer Color Filter With color filter Micro Cavity With microcavity(anode side) Light Emission Top emission Pixel Circuit 5 Tr + 1 CDesign Pixel FET OS

FIG. 22 is a photograph of a 13.3-inch display (the number of pixels:7680×4320) having a resolution of 664 ppi with a WTC structure.

Table 3 shows characteristics of RGB elements in the WTC structure.

TABLE 3 Luminance Luminance Current Driving Chromaticity (panel)^(2)(pixel)^(3) efficiency voltage ^(1) (x, y) [cd/m²] [cd/m²] [cd/A] [V]R (0.674, 0.325) 77 655 16 6.6 G (0.273, 0.709) 194 1667 65 6.5 B(0.136, 0.071) 29 249 4.8 6.7 W (0.313, 0.329) 300 ^(1)Includetransmitting properties of CF ^(2)Luminance corresponding to all-whitepanel at 300 cd/m² ^(3)Intrinsic luminance at aperture ratio of 35%

In the case where the aperture is 35%, R pixels, G pixels, and B pixelsemit light at luminance of approximately 650 cd/cm², approximately 1700cd/cm², and approximately 250 cd/cm², respectively, whereby whiteluminance at chromaticity of D65 can be 300 cd/cm².

With the cavity structure and the color filter (also referred to as CF),high color purity can be obtained.

Table 4 also shows characteristics of RGB elements in the WTC structure.

TABLE 4 Luminance Lifetime [cd/m²] LT₉₅ [hr] R (WTC) 655 1,500 G (WTC)1667 1,500 B (WTC) 249 1,200

The 5% decrease in the luminance of RGB elements can take 1000 hours ormore (LT₉₅). This indicates that burn-in can be inhibited for more thanone month (see FIG. 23 and Table 4).

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 7

In this embodiment, description is given of an example of a flexiblelight-emitting device (light-emitting panel) that can be manufacturedwith the use of any of the stack manufacturing apparatuses described inEmbodiments 2 and 3.

FIG. 24, FIG. 25. FIGS. 26A and 26B, and FIG. 27 are photographs eachshowing the display quality of a flexible display panel including alight-emitting element with a WTC structure.

<Example 1 of Flexible Display>

Specifications of an example of a flexible display panel including alight-emitting element with a WTC structure are shown in Table 5, andFIG. 24 is a photograph showing the display quality.

TABLE 5 Specification Display Area 42.12 mm (H) × 74.88 mm (V)Resolution 540 × RGB (H) × 960 (V) Pixel Density 326 ppi Aperture Ratio40% Pixel Circuit 2 Tr + 1 C Scan Driver Integrated Source DriverIntegrated Light-emitting White tandam OLED + bottom emission + CFStructure (WBC structure) Counter Substrate SUS Film Thickness Up to 100μm Weight 2 g

<Example 2 of Flexible Display>

Specifications of an example of a flexible display panel including alight-emitting element with a WTC structure are shown in Table 6, andFIG. 25 is a photograph showing the display quality.

TABLE 6 Specification Display Area 299.5 mm (H) × 168.5 mm (V)Resolution 960 × RGB (H) × 540 (V) Pixel Density 81.5 ppi Aperture Ratio60% Pixel Circuit 6 Tr + 1 C Scan Driver Integrated Source Driver COFLight-emitting White tandam OLED + bottom emission + CF Structure (WBCstructure) Counter Substrate SUS Film Thickness Up to 100 μm Weight 18 g(not including FPC and COF)

<Example 3 of Flexible Display>

Specifications of an example of a flexible display panel including alight-emitting element with a WTC structure are shown in Table 7, andFIGS. 26A and 26B are photographs showing the display quality.

TABLE 7 Specification Display Area 42.12 mm (H) × 74.88 mm (V)Resolution 540 × RGB (H) × 960 (V) Pixel Density 326 ppi Aperture Ratio57% Pixel Circuit 2 Tr + 1 C Scan Driver Integrated Source DriverIntegrated Light-emitting White tandam OLED + top emission + CFStructure (WBC structure) Counter Substrate SUS Film Thickness Up to 100μm Weight 2 g

<Example 4 of Flexible Display>

Specifications of an example of a flexible display panel including alight-emitting element with a WTC structure are shown in Table 8, andFIG. 27 is a photograph showing the display quality.

TABLE 8 Specification Display Area 299.5 mm (H) × 168.5 mm (V)Resolution 3840 × RGB (H) × 2160 (V) Pixel Density 326 ppi ApertureRatio 55.80% Pixel Circuit 5 Tr + 1 C Scan Driver Integrated SourceDriver COF Light-emitting White tandam OLED + top emission + CFStructure (WBC structure) Thickness Up to 300 μm (including protectivefilm) Weight Up to 300 g (including protective film, not including FPCand COF)

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 8

In this embodiment, a structure of a support supply apparatus of oneembodiment of the present invention will be described with reference toFIGS. 28A and 28B.

FIGS. 28A and 28B are photographs showing an external view of thesupport supply apparatus described in Embodiment 1. FIG. 28A shows anexample of the unwinding mechanism, which supplies a stacked film fromthe state of being rolled up, and FIG. 28B shows an example of thepretreatment portion, which activates a surface of a support.

<Example of Support Supply Apparatus>

A method for supplying a support by a support supply apparatus isdescribed. Here, a film is used as a support.

In a first step, a film is unwound from a rolled film, and is cut sothat the film has a predetermined length for a bonding unit.

The support is sandwiched between two separators. FIG. 28A is aphotograph of the unwinding mechanism in the sheet supply portion.

In a second step, the film stands in a film stock chamber. The processproceeds to a third step based on a timing (transfer instruction) signalsupplied by the bonding unit.

In the third step, a slit is formed while a separator in a bottomportion is left; thus, a separation trigger is formed.

In a fourth step, a separator in a bottom portion is peeled.

In a fifth step, a US cleaner irradiates the support with ultrasonicwaves and suctions the atmosphere while blowing compressed air; thus,foreign substances can be removed. Note that FIG. 28B is a photograph ofthe pretreatment portion.

In a sixth step, a UV irradiation apparatus irradiates the support withultraviolet rays and ozone, so that wettability of the surface and thelike is improved.

In a seventh step, the support is supplied to a bonding chamber or thelike.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 9

In this embodiment, manufacturing processes of a flexible light-emittingdevice (light-emitting panel) using a stack manufacturing apparatus ofone embodiment of the present invention are described with reference toFIG. 29, FIG. 30, FIG. 31, and FIG. 32.

FIG. 29 illustrates a process for separating a functional element formedover a glass substrate and transferring it to a film with an opticalclear resin (OCR).

FIG. 30 illustrates a process for bonding an optical clear adhesive(OCA) to a film and rolling up the film.

FIG. 31 illustrates a process for separating a functional element formedover a glass substrate and transferring it to a film with an OCA.

FIG. 32 illustrates a process for separating a functional element formedover a glass substrate and transferring it to a film.

<Schematic Structure of Device>

A device for separating a functional element formed over a glasssubstrate and transferring it to a film without destruction is referredto as a transfer technology (TT) apparatus.

With the TT apparatus, the yield can be increased. For example, bychanging a substrate which has a size of 300 mm×360 mm or some ofcomponents of the TT apparatus, an element formed over a substrate whichhas a size of 320 mm×400 mm can be separated and transferred.

For example, one substrate over which a functional element is formed canbe subjected to treatment in 10 minutes. As a result, approximately 4000or more substrates can be subjected to treatment per month.

Suppose that the device operates for 28 days per month and is maintainedand serviced for two or three days.

The clean degree in the device is class 100 and an ionizer is providedin each processing unit, whereby electric charges in the substrate intransporting or separating can be removed.

<Process Using Optical Clear Resin>

FIG. 29 illustrates a process in the case of using an OCR.

<<Cutting Step>>

From the rolled film which is rolled up in the state where a film issandwiched between a pair of separators, the film is unwound togetherwith the pair of separators, and a film with a length used in a bondingunit is cut out.

<<Separator Separation Step>>

One of the pair of separators is separated to expose one of the surfacesof the film.

<<Glass Substrate Separation Step>>

A first glass substrate in which a first separation layer and a firstlayer to be separated are formed in this order is bonded to a secondglass substrate in which a second separation layer and a second layer tobe separated are formed in this order so that the first layer to beseparated and the second layer to be separated face each other, wherebya processed substrate is prepared. Then, one glass substrate of theprocessed substrate is separated from one of the layers to be separated.

Note that, for example, one of the first layer to be separated and thesecond layer to be separated includes a light-emitting element, and theother thereof includes a color filter.

<<Adhesive Application Step>>

An adhesive is applied to a surface that was in contact with theseparated glass substrate using a dispenser or the like.

<<Film Bonding Step>>

The processed substrate after the adhesive application step and the filmafter the separator separation step are bonded to each other with theadhesive.

<<Film Separation Step>>

The processed substrate in which the separator, the film, the adhesive,the first layer to be separated, the second layer to be separated, andthe other glass substrate are bonded in this order is prepared, and theother glass substrate is separated from the other of the layers to beseparated.

<<Adhesive Application Step>>

An adhesive is applied to a surface that was in contact with theseparated glass substrate using a dispenser or the like.

<<Film Bonding Step>>

The processed substrate after the adhesive application step and the filmafter the separator separation step are bonded to each other with theadhesive.

<Process Using Adhesive>

FIG. 30 illustrates a process for rolling up a film to which an adhesiveis applied. Note that, for example, an OCA can be used as the adhesive.

<<Separator Separation Step>>

One of the pair of separators between which the film is sandwiched isseparated to expose one of the surfaces of the film.

One of the pair of separators between which the adhesive is sandwichedis separated to expose one of the surfaces of the adhesive.

<<Bonding Step>>

The film after the separator separation step and the adhesive are bondedto each other.

<Process Using Optical Clear Adhesive>

FIG. 31 illustrates a process in the case of using an OCA.

The process using an OCA is simpler than the process using an OCR.

<<Cutting Step>>

From the rolled film which is rolled up in the state where the film withthe adhesive is sandwiched between the pair of separators, the film withthe adhesive is unwound together with the pair of separators, and a filmwith the adhesive with a length used in a bonding unit is cut out.

<<Separator Separation Step>>

One of the pair of separators, which is in contact with the adhesive, isseparated to expose the adhesive.

<<Glass Substrate Separation Step>>

A first glass substrate in which a first separation layer and a firstlayer to be separated are formed in this order is bonded to a secondglass substrate in which a second separation layer and a second layer tobe separated are formed in this order so that the first layer to beseparated and the second layer to be separated face each other, wherebya processed substrate is prepared. Then, one of the glass substrates isseparated from one of the layers to be separated.

Note that, for example, one of the first layer to be separated and thesecond layer to be separated includes a light-emitting element, and theother thereof includes a color filter.

<<Film Bonding Step>>

The processed substrate and the film with the adhesive after theseparator separation step are bonded to each other with the adhesive.

<<Film Separation Step>>

The processed substrate in which the separator, the film, the adhesive,the first layer to be separated, the second layer to be separated, andthe other glass substrate are bonded in this order is prepared, and theother glass substrate is separated from the other of the layers to beseparated.

<<Film Bonding Step>>

The film after the separator separation step is bonded to the surface ofthe processed substrate that was is in contact with the separated glasssubstrate with an adhesive.

<Manufacturing Process of Flexible Light-Emitting Panel>

FIG. 32 illustrates a manufacturing process of a flexible light-emittingpanel.

<<Before Treatment>>

A processed substrate includes a glass substrate, a layer containingtungsten (W layer), a passivation layer, a layer including a transistor(FET), a layer including a light-emitting element (EL and cathode), asealing resin layer, a color filter (CF), a passivation layer, a layercontaining tungsten (W layer), and a glass substrate in this order.

<<After First Separation Treatment>>

The processed substrate from which one of the glass substrates isseparated includes the passivation layer, the layer including thetransistor (FET), the layer including the light-emitting element (EL andcathode), the sealing resin layer, the color filter (CF), thepassivation layer, the layer containing tungsten (W layer), and theglass substrate in this order.

<<After First Bonding Treatment>>

The processed substrate one side of which is bonded to a film includesthe protective film, an adhesive, the passivation layer, the layerincluding a transistor (FET), the layer including the light-emittingelement (EL and cathode), the sealing resin layer, the color filter(CF), the passivation layer, the layer containing tungsten (W layer),and the glass substrate in this order.

<<After Second Separation Treatment>>

The processed substrate from which the other of the glass substrates isseparated includes the protective film, the adhesive, the passivationlayer, the layer including a transistor (FET), the layer including thelight-emitting element (EL and cathode), the sealing resin layer, thecolor filter (CF), and the passivation layer in this order.

<<After Second Bonding Treatment>>

The processed substrate the other side of which is bonded to a filmincludes the protective film, the adhesive, the passivation layer, thelayer including the transistor (FET), the layer including thelight-emitting element (EL and cathode), the sealing resin layer, thecolor filter (CF), the passivation layer, an adhesive, and a protectivefilm in this order. In this manner, a light-emitting panel isfabricated.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 10

In this embodiment, a manufacturing method of a stack of one embodimentof the present invention is described with reference to FIGS. 33A1,33A2, 33B1, 33B2, 33C1, 33C2, 33D1, and 33D2, FIGS. 34A1, 34A2, 34B1,and 34B2, and FIGS. 35A1, 35A2, 35B1, 35B2, 35C1, 35C2, 35D1, and 35D2.Note that some of the components are not illustrated for easyunderstanding in some cases.

FIGS. 33A1, 33A2, 33B1, 33B2, 33C1, 33C2, 33D1, and 33D2, and FIGS.34A1, 34A2, 34B1, and 34B2 are top views illustrating methods formanufacturing one stack or a plurality of stacks from one processedmember of one embodiment of the present invention.

FIGS. 35A1, 35A2, 35B1, 35B2, 35C1, 35C2, 35D1, and 35D2 illustrate amanufacturing method of a stack including an opening of one embodimentof the present invention.

<Method for Manufacturing Stack>

The manufacturing method of a stack described in this embodiment isdifferent from the manufacturing method of a stack in Embodiment 3 inthat a plurality of stacks is manufactured from one processed member.Different steps will be described in detail below, and the abovedescription is referred to for the similar steps.

With such a method, stacks having various sizes can be manufactured fromprocessed members having various sizes

Specifically, a stack including a 3.4-inch display panel can bemanufactured using a glass substrate with a size of 126.6 mm×126.6 mm.Alternatively, a stack including a 13.5-inch display panel can bemanufactured using a glass substrate with a size of 300 mm×360 mm.

Further alternatively, a stack in which four 3.4-inch display panels areplaced or a stack in which two 5.9-inch display panels are placed can bemanufactured using a glass substrate with a size of 300 mm×360 mm. Notethat the stack in which a plurality of display panels is placed can bedivided, so that a plurality of display panels can be manufactured fromone stack.

<<First Step>>

A processed member 90(1) used for manufacturing a stack 92(1) isprepared. A structure of the processed member 90(1) is described withreference to FIGS. 33A1 and 33B1.

A processed member 90(2) used for manufacturing a stack 92(2) isprepared. A structure of the processed member 90(2) is described withreference to FIGS. 33A2 and 33B2.

The processed member 90(1) is formed by bonding a structure on the leftside and a structure on the right side of FIG. 33A1 with a bonding layer(not illustrated) (see FIG. 33B1).

Specifically, the processed member 90(1) is formed by bonding astructure in which the first substrate 11, the first separation layer(not illustrated) formed over the first substrate 11, and a first layer13(1) to be separated (hereinafter simply referred to as a first layer13(1)) whose one surface is in contact with the first separation layerare stacked (see the left side of FIG. 33A1) and a structure in whichthe second substrate 21, the second separation layer (not illustrated)formed over the second substrate 21, and a second layer 23(1) to beseparated (hereinafter simply referred to as a second layer 23(1)) whoseone surface is in contact with the second separation layer are stacked(see the right side of FIG. 33A1) with the adhesive layer (see FIG.33B1).

The processed member 90(2) is formed by bonding a structure on the leftside and a structure on the right side of FIG. 33A2 with a bonding layer(not illustrated) (see FIG. 33B2).

Specifically, the processed member 90(2) is formed by bonding astructure in which the first substrate 11, the first separation layer(not illustrated) formed over the first substrate 11, and a first layer13(2) to be separated (hereinafter simply referred to as a first layer13(2)) whose one surface is in contact with the first separation layerare stacked (see the left side of FIG. 33A2) and a structure in whichthe second substrate 21, the second separation layer (not illustrated)formed over the second substrate 21, and a second layer 23(2) to beseparated (hereinafter simply referred to as a second layer 23(2)) whoseone surface is in contact with the second separation layer are stacked(see the right side of FIG. 33A2) with the adhesive layer (see FIG.33B2).

The processed member 90(2) is different from the processed member 90(1)in the following two points.

The first different point is that the first layer 13(2) includes aplurality of functional layers separated by a space and conductivelayers 13 b(2) electrically connected to the respective functionallayers and the first layer 13(1) includes one functional layer and aconductive layer 13 b(1) electrically connected to the functional layer.

The second different point is that the second layer 23(2) includes aplurality of functional layers 23 b(2) separated by the space and thesecond layer 23(1) includes one functional layer 23 b(1).

The conductive layer 13 b(1) or the conductive layers 13 b(2) can beused as a terminal supplied with a signal or a terminal supplying asignal, for example. Moreover, the conductive layer 13 b(1) or theconductive layers 13 b(2) can be supplied with a signal or can supply asignal.

The space which separates the plurality of functional layers 23 b(2) inthe second layer 23(2) are placed to overlap with the space whichseparates the plurality of functional layers in the first layer 13(2)and the space which separates the conductive layers 13 b(2).

Furthermore, in each of the processed member 90(1) and the processedmember 90(2), separation triggers 13 s are provided in the vicinity ofthe end portions of the bonding layer that is not illustrated.

<<Second Step>>

A surface layer including the first substrate 11 of each of theprocessed member 90(1) and the processed member 90(2) is separated toobtain a first remaining portion (not illustrated).

<<Third Step>>

The first adhesive layer (not illustrated) is formed on each firstremaining portion and the first remaining portion is bonded to the firstsupport (not illustrated) with the first adhesive layer. Through thisstep, the stacks 91(1) and 91(2) are obtained.

Specifically, the stack 91(1) including the first support, the firstadhesive layer, the first layer 13(1), the bonding layer whose onesurface is in contact with the first layer 13(1), the second layer 23(1)whose one surface is in contact with the other surface of the bondinglayer, the second separation layer whose one surface is in contact withthe other surface of the second layer 23(1), and the second substrate 21in this order is obtained (see FIG. 33C1).

Furthermore, the stack 91(2) including the first support, the firstadhesive layer, the first layer 13(2), the bonding layer whose onesurface is in contact with the first layer 13(2), the second layer 23(2)whose one surface is in contact with the other surface of the bondinglayer, the second separation layer whose one surface is in contact withthe other surface of the second layer 23(2), and the second substrate 21in this order is obtained (see FIG. 33C2).

<<Sixth Step>>

Part of the second layer 23(1) in the vicinity of the end portion of thefirst adhesive layer of the stack 91(1) is separated from the secondsubstrate 21(1) to form the second separation trigger (not illustrated).

Part of the second layer 23(2) in the vicinity of the end portion of thefirst adhesive layer of the stack 91(2) is separated from the secondsubstrate 21(2) to form the second separation trigger (not illustrated).

<<Seventh Step>>

The second remaining portion (not illustrated) is obtained by beingseparated from each of the stacks 91(1) and 91(2).

<<Modification Example of Ninth Step>>

The second adhesive layer (not illustrated) is formed on the secondremaining portion. The second remaining portion is bonded to each of thesecond support 42(1) and the second support 42(2) with the secondadhesive layer, so that the stack 92(1) and the stack 92(2) areobtained.

Note that the second support 42(1) may have a size with which part ofthe second layer 23(1) is exposed (see FIG. 33D1). The second support42(2) may have a size with which part of the second layer 23(2) isexposed (see FIG. 33D2).

Specifically, the stack 92(1) including the first support, the firstadhesive layer, the first layer 13(1), the bonding layer whose onesurface is in contact with the other surface of the first layer 13(1),the second layer 23(1) whose one surface is in contact with the othersurface of the bonding layer, and the second support 42(1) in this orderis obtained (see FIG. 33D1).

Specifically, the stack 92(2) including the first support, the firstadhesive layer, the first layer 13(2), the bonding layer whose onesurface is in contact with the other surface of the first layer 13(2),the second layer 23(2) whose one surface is in contact with the othersurface of the bonding layer, and the second support 42(2) in this orderis obtained (see FIG. 33D2).

With a method described later, an opening exposing the conductive layer13 b(1) may be provided in the second layer 23(1) of the stack 92(1),and an opening exposing the conductive layer 13 b(2) may be provided inthe second layer 23(2) of the stack 92(2) (see FIGS. 34A1 and 34A2). Inparticular, the size of the second support 42(1) or the second support42(2) and the position where the second support 42(1) or the secondsupport 42(2) is bonded may be determined so that the position where theopening is provided is exposed.

Furthermore, the second support 42(1) may be cut so that the stack 92(1)has a predetermined size (see FIG. 34B1).

The positions where the space separating the plurality of functionallayers 23 b(2) of the second layer 23(2), the space separating thefunctional layers in the first layer 13(2), and the space separating theconductive layers 13 b(2) overlap with each other are cut, so that aplurality of stacks 92(3) including the functional layers can bemanufactured from the one stack 92(2) (see FIG. 34B2).

For example, in the case where four stacks 92(3) are manufactured fromone stack 92(2), two second supports 42 b(2) separated in a belt shapemay be used. The second supports 42 b(2) can be bonded to the secondlayers 23(2) easily. Alternatively, the second supports 42 b(2) dividedinto four may be used or the second supports 42 b(2) which is notdivided may be used.

For example, in the case where the light-emitting panel with the WTCstructure described in Embodiment 6 is manufactured using this method,the pixel on the FET substrate side and the color filter of the CFsubstrate side need to be positioned and bonded to each other so thatthe pixel and the color filter overlap with each other accurately. Whenthe processed member becomes larger, by the influence of the bend or thelike, the thickness of the bonding layer, the first adhesive layer, orthe second adhesive layer may be not uniform in some cases. Furthermore,part of the films included in the stack may be peeled due to a dust orthe like mixed into the stack in the process of bonding in some cases.The larger the processed member becomes, the easier the dust or the likeis mixed into the stack; thus, the dust or the like in the manufacturingapparatus needs to be reduced.

For example, the manufacturing process of the light-emitting panel canbe divided into three processes.

The separation of the substrate on the FET substrate and bonding of thefirst support, that is, the first step to the third step, correspond toa first separation process.

The separation of the substrate on the CF substrate and bonding of thesecond support, that is, the fourth step to the modification example ofthe ninth step, correspond to a second separation process.

Formation of the opening reaching the conductive layer on the FETsubstrate side and connecting an FPC to the FET substrate with ananisotropic conductive film correspond to an FPC connection process.

Table 9 shows yield for each process in the case where two 5.3-inchflexible display devices with the WTC structure were manufactured fromone stack using a first substrate and a second substrate each having asize of 300 mm×360 mm. Note that Table 9 shows the case where 76 displaydevices (obtained from 38 substrates) were manufactured.

TABLE 9 Process 1st transfer 2nd transfer Exposing FPC Total Yield92.10% 91.40% 100.00% 84.20% (70/76) (64/70) (64/64) (64/76)

Yield for each process was 90% or higher. The total yield was 84%. Apeeling of the organic film triggered by a foreign substrate is themajor defect observed in the first and second separation processes.

<Manufacturing Method of Stack Including Opening>

A manufacturing method of a stack described in this embodiment isdifferent from that described in Embodiment 3 in that a step of formingan opening is included.

The different steps will be described in detail below, and the abovedescription is referred to for the similar steps.

A manufacturing method of a stack including an opening is described withreference to FIGS. 35A1, 35A2, 35B1, 35B2, 35C1, 35C2, 35D1, and 35D2.

FIGS. 35A1, 35A2, 35B1, 35B2, 35C1, 35C2, 35D1, and 35D2 illustrate themanufacturing method of a stack including an opening which exposes partof a layer to be separated. In FIGS. 35A1, 35A2, 35B1, 35B2, 35C1, 35C2,35D1, and 35D2, cross-sectional views of a structure of a stack areillustrated on the left side, and top views corresponding to the crosssectional views are illustrated on the right side.

FIGS. 35A1, 35A2, 35B1, and 35B2 illustrate a method for manufacturing astack 92 c having an opening by using a second support 42 b which issmaller than the first support 41 b.

FIGS. 35C1, 35C2, 35D1, and 35D2 illustrate a method for manufacturing astack 92 d having an opening formed in the second support 42.

<<Example 1 of Manufacturing Method of Stack Including Opening>>

A manufacturing method of a stack has the same step as the above ninthstep except that the second support 42 b which is smaller than the firstsupport 41 b is used instead of the second support 42. By themanufacturing method, a stack in which part of the second layer 23 isexposed can be manufactured (see FIGS. 35A1 and 35A2).

A liquid adhesive can be used as the second adhesive layer 32.Alternatively, an adhesive whose fluidity is inhibited and which isformed in a single wafer shape in advance (also referred to as asheet-like adhesive) can be used. By using the sheet-like adhesive, theamount of part of the second adhesive layer 32 that extends beyond thesecond support 42 b can be small. In addition, the second adhesive layer32 can have uniform thickness easily.

Alternatively, part of the exposed part of the second layer 23 is cutoff, and the first layer 13 may be exposed (see FIGS. 35B1 and 35B2).

Specifically, with a blade or the like which has a sharp tip, a slit isformed in the exposed second layer 23. Then, for example, an adhesivetape or the like is attached to part of the exposed second layer 23 toconcentrate stress near the slit, and the part of the exposed secondlayer 23 is separated together with the attached tape or the like,whereby the part of the second layer 23 can be selectively removed.

Moreover, a layer which can suppress the bonding power of the bondinglayer 30 to the first layer 13 may be selectively formed on part of thefirst layer 13. For example, a material which is not easily bonded tothe bonding layer 30 may be selectively formed. Specifically, anisland-shaped organic material may be deposited. Thus, part of thebonding layer 30 can be selectively removed together with the secondlayer 23 easily. As a result, the first layer 13 can be exposed.

Note that for example, in the case where the first layer 13 includes afunctional layer and the conductive layer 13 b electrically connected tothe functional layer, the conductive layer 13 b can be exposed in anopening in the second stack 92 c. Thus, the conductive layer 13 bexposed in the opening can be used as a terminal supplied with a signal.

As a result, the conductive layer 13 b part of which is exposed in theopening can be used as a terminal that can extract a signal supplied bythe functional layer. Alternatively, the conductive layer 13 b can beused as a terminal that can be supplied with a signal from an externaldevice.

<<Example 2 of Manufacturing Method of Stack Including Opening>>

A mask 48 having an opening formed to overlap with an opening formed inthe second support 42 is formed on the stack 92. Next, a solvent 49 isdropped into the opening in the mask 48. Thus, with the solvent 49, thesecond support 42 exposed in the opening in the mask 48 can be swelledor dissolved (see FIGS. 35C1 and 35C2).

After the extra solvent 49 is removed, stress is applied by rubbing thesecond support 42 exposed in the opening in the mask 48 or the like.Thus, the second support 42 or the like in a portion overlapping withthe opening in the mask 48 can be removed.

Moreover, with a solvent with which the bonding layer 30 is swelled ordissolved, the first layer 13 can be exposed (see FIGS. 35D1 and 35D2).

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 11

In this embodiment, a structure of a flexible input/output device thatcan be manufactured using any of the stack manufacturing apparatusesdescribed in Embodiments 2 and 3 is described with reference to FIGS.36A to 36C.

FIG. 36A is a top view illustrating the structure of an input/outputdevice that can be used in a data processor according to one embodimentof the present invention.

FIG. 36B is a cross-sectional view taken along section line A-B andsection line C-D in FIG. 36A.

FIG. 36C is a cross-sectional view taken along section line E-F in FIG.36A.

<Top View>

An input/output device S00 illustrated in this embodiment includes adisplay area S01 (see FIG. 36A).

The display area S01 includes a plurality of pixels S02 and a pluralityof imaging pixels S08. The imaging pixels S08 can sense a touch of afinger or the like on the display area S01. Thus, a touch sensor can beformed using the imaging pixels S08.

Each of the pixels S02 includes a plurality of subpixels (e.g., asubpixel S02R). The subpixel includes a light-emitting element and apixel circuit that can supply power for driving the light-emittingelement.

The pixel circuit is electrically connected to a wiring through which aselection signal can be supplied and a wiring through which an imagesignal can be supplied.

The input/output device S00 further includes a scan line driver circuitS03 g(1) that can supply a selection signal to the pixel S02 and animage signal line driver circuit S03 s(1) that can supply an imagesignal to the pixel S02.

The imaging pixel S08 includes a photoelectric conversion element and animaging pixel circuit that drives the photoelectric conversion element.

The imaging pixel circuit is electrically connected to a wiring throughwhich a control signal can be supplied and a wiring through which apower supply potential can be supplied.

Examples of the control signal include a signal for selecting an imagingpixel circuit from which a recorded imaging signal is read, a signal forinitializing an imaging pixel circuit, and a signal for determining thetime it takes for an imaging pixel circuit to sense light.

The input/output device S00 includes an imaging pixel driver circuit S03g(2) that can supply a control signal to the imaging pixel S08 and animaging signal line driver circuit S03 s(2) that reads an imagingsignal.

<Cross-Sectional View>

The input/output device S00 includes a substrate S10 and a countersubstrate S70 facing the substrate S10 (see FIG. 36B).

The substrate S10 is a stacked body including a flexible substrate S10b, a barrier film S10 a that prevents diffusion of an unintentionalimpurity to the light-emitting element, and an adhesive layer S10 c thatbonds the substrate S10 b to the barrier film S10 a.

The counter substrate S70 is a stacked body including a flexiblesubstrate S70 b, a barrier film S70 a that prevents diffusion of anunintentional impurity to the light-emitting element, and an adhesivelayer S70 c that bonds the substrate S70 b to the barrier film S70 a(see FIG. 36B).

A sealant S60 bonds the counter substrate S70 to the substrate S10. Thesealant S60 has a refractive index higher than that of air serves as anoptical adhesive layer. The pixel circuit and the light-emitting element(e.g., a first light-emitting element S50R) are provided between thesubstrate S10 and the counter substrate S70.

<Pixel Structure>

The pixel S02 includes a subpixel S02R, a subpixel S02G, and a subpixelS02B (see FIG. 36C). The subpixel S02R includes a light-emitting moduleS80R. The subpixel S02G includes a light-emitting module S80G. Thesubpixel S02B includes a light-emitting module S80B.

For example, the subpixel S02R includes the first light-emitting elementS50R and a pixel circuit including a transistor S02 t that can supplypower to the first light-emitting element S50R (see FIG. 36B).Furthermore, the light-emitting module S80R includes the firstlight-emitting element S50R and an optical element (e.g., a coloringlayer S67R).

The light-emitting element S50R includes a first lower electrode S51R,an upper electrode S52, and a layer S53 containing a light-emittingorganic compound between the lower electrode S51R and the upperelectrode S52 (see FIG. 36C).

The layer S53 containing a light-emitting organic compound includes alight-emitting unit S53 a, a light-emitting unit S53 b, and anintermediate layer S54 between the light-emitting units S53 a and S53 b.

The light-emitting module S80R includes the first coloring layer S67R onthe counter substrate S70. The coloring layer transmits light of aspecific wavelength and is, for example, a layer that selectivelytransmits light of red, green, or blue. Alternatively, a region thattransmits light emitted from the light-emitting element as it is may beprovided.

The light-emitting module S80R, for example, includes the sealant S60that is in contact with the first light-emitting element S50R and thefirst coloring layer S67R.

The first coloring layer S67R overlaps the first light-emitting elementS50R. Accordingly, part of light emitted from the light-emitting elementS50R passes through the sealant S60 serving as an optical adhesive layerand through the first coloring layer S67R and is emitted to the outsideof the light-emitting module S80R as indicated by arrows in FIGS. 36Band 36C.

<Display Panel Structure>

The input/output device S00 includes a light-blocking layer S67BM on thecounter substrate S70. The light-blocking layer S67BM is provided tosurround the coloring layer (e.g., the first coloring layer S67R).

The input/output device S00 includes an anti-reflective layer S67 poverlapping the display area S01. As the anti-reflective layer S67 p, acircular polarizing plate can be used, for example.

The input/output device S00 includes an insulating film S21. Theinsulating film S21 covers the transistor S02 t. Note that theinsulating film S21 can be used as a layer for flattening unevennesscaused by the pixel circuit. An insulating film on which a layer thatcan prevent diffusion of an impurity to the transistor S02 t and thelike is stacked can be used as the insulating film S21.

The input/output device S00 includes the light-emitting element (e.g.,the first light-emitting element S50R) over the insulating film S21.

The input/output device S00 includes, over the insulating film S21, apartition S28 that overlaps an end portion of the first lower electrodeS51R (see FIG. 36C). In addition, a spacer S29 that controls thedistance between the substrate S10 and the counter substrate S70 isprovided on the partition S28.

<Structure of Image Signal Line Driver Circuit>

The image signal line driver circuit S03 s(1) includes a transistor S03t and a capacitor S03 c. Note that the driver circuit can be formedthrough the same steps and over the same substrate as the pixel circuit.

<Imaging Pixel Structure>

The imaging pixel S08 includes a photoelectric conversion element S08 pand an imaging pixel circuit for sensing light received by thephotoelectric conversion element S08 p. The imaging pixel circuitincludes a transistor S08 t.

For example, a PIN photodiode can be used as the photoelectricconversion element S08 p.

<Other Structures>

The input/output device S00 includes a wiring S11 through which a signalcan be supplied. The wiring S11 is provided with a terminal S19. Notethat an FPC(1) through which a signal such as an image signal or asynchronization signal can be supplied is electrically connected to theterminal S19.

Note that a printed wiring board (PWB) may be attached to the FPC(1).

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 12

In this embodiment, a structure of a foldable touch panel in which atouch sensor (a contact sensor device) as an input mechanism is providedto overlap with a display unit is described with reference to FIGS. 37Aand 37B and FIG. 38.

FIG. 37A is a schematic perspective view of a touch panel F00 describedas an example in this embodiment. Note that FIGS. 37A and 37B illustrateonly main components for simplicity. FIG. 37B is a developed view of theschematic perspective view of the touch panel F00.

FIG. 38 is a cross-sectional view of the touch panel F00 taken alongline Z1-Z2 in FIG. 37A.

The touch panel F00 includes a display unit F01 and a touch sensor F95(see FIG. 37B). Furthermore, the touch panel F00 includes a substrateF10, a substrate F70, and a substrate F90. Note that the substrate F10,the substrate F70, and the substrate F90 each have flexibility.

The display unit F01 includes the substrate F10, and over the substrateF10, a plurality of pixels and a plurality of wirings F11 through whichsignals are supplied to the pixels. The plurality of wirings F11 are ledto a peripheral portion of the substrate F10, and some of the pluralityof wirings F11 form a terminal F19. The terminal F19 is electricallyconnected to an FPC(1).

<Touch Sensor>

The substrate F90 includes the touch sensor F95 and a plurality ofwirings F98 electrically connected to the touch sensor F95. Theplurality of wirings F98 are led to the periphery of the substrate F90,and some of the wirings F98 form part of a terminal for electricalconnection to an FPC(2). Note that in FIG. 37B, electrodes, wirings, andthe like of the touch sensor F95 that are provided on the back side ofthe substrate F90 (the side opposite to the viewer side) are indicatedby solid lines for clarity.

A capacitive touch sensor is preferably used. Examples of the capacitivetouch sensor are a surface capacitive touch sensor and a projectedcapacitive touch sensor. Examples of the projected capacitive touchsensor are a self-capacitive touch sensor and a mutual capacitive touchsensor, which differ mainly in the driving method. Examples of theprojected capacitive touch sensor are a self-capacitive touch sensor anda mutual capacitive touch sensor, which differ mainly in the drivingmethod. The use of a mutual capacitive touch sensor is preferablebecause multiple points can be sensed simultaneously.

An example of using a projected capacitive touch sensor is describedbelow with reference to FIG. 37B. Note that a variety of sensors thatcan sense the closeness or the contact of a sensing target such as afinger can be used.

The projected capacitive touch sensor F95 includes electrodes F91 andelectrodes F92. The electrodes F91 are electrically connected to any ofthe plurality of wirings F98, and the electrodes F92 are electricallyconnected to any of the other wirings F98.

The electrode F92 is in the form of a series of quadrangles arranged inone direction as illustrated in FIGS. 37A and 37B. Each of theelectrodes F91 is in the form of a quadrangle. A wiring F94 electricallyconnects two electrodes F91 arranged in a direction intersecting withthe direction in which the electrode F92 extends. The intersecting areaof the electrode F92 and the wiring F94 is preferably as small aspossible. Such a structure allows a reduction in the area of a regionwhere the electrodes are not provided, so that unevenness intransmittance can be reduced. As a result, unevenness in luminance oflight from the touch sensor F95 can be reduced.

Note that the shapes of the electrodes F91 and the electrodes F92 arenot limited to the above-mentioned shapes and can be any of a variety ofshapes. For example, the plurality of electrodes F91 may be provided sothat space between the electrodes F91 are reduced as much as possible,and a plurality of electrodes F92 may be provided with an insulatinglayer sandwiched between the electrodes F91 and the electrodes F92 andmay be spaced apart from each other to form a region not overlappingwith the electrodes F91. In that case, a dummy electrode electricallyinsulated from the electrodes F92 is preferably provided between twoadjacent electrodes F92, in which case the area of regions havingdifferent transmittances can be reduced.

The structure of the touch sensor F95 is described with reference toFIG. 38.

The touch sensor F95 includes the substrate F90, the electrodes F91 andthe electrodes F92 provided in a staggered arrangement on the substrateF90, an insulating layer F93 covering the electrodes F91 and theelectrodes F92, and the wiring F94 that electrically connects theadjacent electrodes F91 to each other.

An adhesive layer F97 bonds the substrate F90 to the substrate F70 sothat the touch sensor F95 overlaps with the display unit F01

The electrodes F91 and the electrodes F92 are formed using alight-transmitting conductive material. As a light-transmittingconductive material, a conductive oxide such as indium oxide, indium tinoxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium isadded can be used.

The electrodes F91 and the electrodes F92 may be formed by depositing alight-transmitting conductive material on the substrate F90 by asputtering method and then removing an unnecessary portion by any ofknown patterning techniques such as photolithography.

The insulating layer F93 covers the electrodes F91 and the electrodesF92. Examples of a material for the insulating layer F93 are a resinsuch as acrylic or epoxy resin, a resin having a siloxane bond, and aninorganic insulating material such as silicon oxide, silicon oxynitride,or aluminum oxide.

Furthermore, openings reaching the electrodes F91 are formed in theinsulating layer F93, and the wiring F94 electrically connects theadjacent electrodes F91. The wiring F94 is preferably formed using alight-transmitting conductive material, in which case the aperture ratioof the touch panel can be increased. Moreover, the wiring F94 ispreferably formed using a material that has higher conductivity thanthose of the electrodes F91 and the electrodes F92.

One electrode F92 extends in one direction, and a plurality ofelectrodes F92 are provided in the form of stripes.

The wiring F94 intersects with the electrode F92.

Adjacent electrodes F91 are provided with one electrode F92 providedtherebetween and are electrically connected by the wiring F94.

Note that the plurality of electrodes F91 are not necessarily arrangedin the direction orthogonal to one electrode F92 and may be arranged tointersect with one electrode F92 at an angle of less than 90 degrees.

One wiring F98 is electrically connected to any of the electrodes F91and F92. Part of the wiring F98 functions as a terminal. For the wiringF98, a metal material such as aluminum, gold, platinum, silver, nickel,titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, orpalladium or an alloy material containing any of these metal materialscan be used.

Note that an insulating layer that covers the insulating layer F93 andthe wiring F94 may be provided to protect the touch sensor F95.

Furthermore, a connection layer F99 electrically connects the wiring F98to the FPC(2).

As the connection layer F99, a known anisotropic conductive film (ACF),a known anisotropic conductive paste (ACP), or the like can be used.

The adhesive layer F97 has a light-transmitting property. For example, athermosetting resin or an ultraviolet curable resin can be used;specifically, a resin such as acrylic, urethane, epoxy resin, or a resinhaving a siloxane bond can be used.

<Display Unit>

The display unit F01 includes a plurality of pixels arranged in amatrix. Each of the pixels includes a display element and a pixelcircuit for driving the display element.

In this embodiment, an example of using an organic electroluminescentelement that emits white light as a display element will be described;however, the display element is not limited to such element.

As the display element, for example, in addition to organicelectroluminescent elements, any of a variety of display elements suchas display elements (electronic ink) that perform display by anelectrophoretic method, an electronic liquid powder method, or the like;MEMS shutter display elements; and optical interference type MEMSdisplay elements can be used. Note that a pixel circuit structuresuitable for display elements to be used can be selected from knownpixel circuit structures.

The substrate F10 is a stacked body in which a flexible substrate F10 b,a barrier film F10 a that prevents diffusion of unintentional impuritiesto light-emitting elements, and an adhesive layer F10 c that bonds thebarrier film F10 a to the substrate F10 b are stacked.

The substrate F70 is a stacked body in which a flexible substrate F70 b,a barrier film F70 a that prevents diffusion of unintentional impuritiesto the light-emitting elements, and an adhesive layer F70 c that bondsthe barrier film F70 a to the substrate F70 b are stacked.

A sealant F60 bonds the substrate F70 to the substrate F10. The sealantF60, also serving as an optical adhesive layer, has a refractive indexhigher than that of air. The pixel circuits and the light-emittingelements (e.g., a first light-emitting element F50R) are providedbetween the substrate F10 and the substrate F70.

<<Structure of Pixel>>

A pixel includes a sub-pixel F02R, and the sub-pixel F02R includes alight-emitting module F80R.

The sub-pixel F02R includes the first light-emitting element F50R andthe pixel circuit including a transistor F02 t that can supply electricpower to the first light-emitting element F50R. Furthermore, thelight-emitting module F80R includes the first light-emitting elementF50R and an optical element (e.g., a first coloring layer F67R).

The first light-emitting element F50R includes a lower electrode, anupper electrode, and a layer containing a light-emitting organiccompound between the lower electrode and the upper electrode.

The light-emitting module F80R includes the first coloring layer F67R onthe substrate F70. The coloring layer transmits light of a particularwavelength and is, for example, a layer that selectively transmits lightof red, green, or blue color. A region that transmits light emitted fromthe light-emitting element as it is may be provided as well.

The light-emitting module F80R includes the sealant F60 that is incontact with the first light-emitting element F50R and the firstcoloring layer F67R.

The first coloring layer F67R is positioned in a region overlapping withthe first light-emitting element F50R. Accordingly, part of lightemitted from the first light-emitting element F50R passes through thesealant F60 that also serves as an optical adhesive layer and throughthe first coloring layer F67R and is emitted to the outside of thelight-emitting module F80R as indicated by an arrow in FIG. 38.

<<Structure of Display Unit>>

The display unit F01 includes a light-blocking layer F67BM on thesubstrate F70. The light-blocking layer F67BM is provided so as tosurround the coloring layer (e.g., the first coloring layer F67R).

The display unit F01 includes an anti-reflective layer F67 p positionedin a region overlapping with pixels. As the anti-reflective layer F67 p,for example, a circular polarizing plate can be used.

The display unit F01 includes an insulating film F21. The insulatingfilm F21 covers the transistor F02 t. Note that the insulating film F21can be used as a layer for planarizing unevenness caused by the pixelcircuits. An insulating film on which a layer that can prevent diffusionof impurities to the transistor F02 t and the like is stacked can beused as the insulating film F21.

The display unit F01 includes the light-emitting elements (e.g., thefirst light-emitting element F50R) over the insulating film F21.

The display unit F01 includes, over the insulating film F21, a partitionwall F28 that overlaps with an end portion of the first lower electrode.In addition, a spacer that controls the distance between the substrateF10 and the substrate F70 is provided on the partition wall F28

<<Structure of Image Signal Line Driver Circuit>>

The image signal line driver circuit F03 s(1) includes a transistor F03t and a capacitor F03 c. Note that the driver circuit can be formed inthe same process and over the same substrate as those of the pixelcircuits.

<<Other Structures>>

The display unit F01 includes the wirings F11 through which signals canbe supplied. The wirings F11 are provided with the terminal F19. Notethat the FPC(1) through which a signal such as an image signal or asynchronization signal can be supplied is electrically connected to theterminal F19.

Note that a printed wiring board (PWB) may be attached to the FPC(1).

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

This application is based on Japanese Patent Application serial no.2013-179700 filed with Japan Patent Office on Aug. 30, 2013, andJapanese Patent Application serial no. 2014-029405 filed with JapanPatent Office on Feb. 19, 2014, the entire contents of which are herebyincorporated by reference.

What is claimed is:
 1. A support supply apparatus comprising: apositioning portion; a slit formation portion provided with a cutter; apeeling portion provided with a peeling mechanism; a first transfermechanism; a second transfer mechanism; and a table, wherein the firsttransfer mechanism is configured to transfer a support and a separatorin contact with one surface of the support to the positioning portionwhile the first transfer mechanism supports the other surface of thesupport, and to place the support and the separator at a predeterminedposition of the table, wherein the table is configured to move and torotate to align the support and the separator with respect to thepredetermined position in the positioning portion, to fix the supportand the separator at the predetermined position, and to transfer thesupport and the separator from the positioning portion to the slitformation portion, wherein the second transfer mechanism is configuredto transfer the support and the separator between the slit formationportion and the peeling portion while the second transfer mechanismsupports the other surface of the support, wherein the cutter isconfigured to form a slit which does not pass through the separator inthe vicinity of an end portion of the support, and wherein the peelingmechanism is configured to hold and to extend the separator overlappingwith the end portion of the support, and then to peel the separator fromthe support.
 2. The support supply apparatus according to claim 1,further comprising a camera in the positioning portion, wherein thecamera is configured to take an image for determining whether thesupport and the separator are positioned at the predetermined positionof the table.
 3. The support supply apparatus according to claim 1,wherein the table is configured to rotate in the slit formation portion.4. The support supply apparatus according to claim 1, further comprisinga pretreatment portion comprising: a first pretreatment mechanism whichirradiates the one surface of the support with an ultrasonic wave andsuctions an atmosphere while blowing compressed air; or a secondpretreatment mechanism which irradiates the one surface of the supportwith an ultraviolet ray.
 5. The support supply apparatus according toclaim 1, further comprising a pretreatment portion comprising: a firstpretreatment mechanism which irradiates the one surface of the supportwith an ultrasonic wave and suctions an atmosphere while blowingcompressed air; and a second pretreatment mechanism which irradiates theone surface of the support with an ultraviolet ray.
 6. The supportsupply apparatus according to claim 1, further comprising a sheet supplyportion comprising: a tray in which a stacked film including the supportand the separator is stored; a multi-feed prevention mechanism whichblows a gas to an end portion of the stacked film picked up by the firsttransfer mechanism from the tray; and a multi-feed detection mechanismwhich detects whether the stacked film picked up by the first transfermechanism is one.
 7. The support supply apparatus according to claim 1,further comprising a sheet supply portion comprising: an unwindingmechanism which unwinds a stacked film including the support and theseparator in a rolled state and supplies the stacked film; a cuttingmechanism which cuts the stacked film into a sheet-like stacked filmwith a predetermined size; and a tray in which the sheet-like stackedfilm is stored.
 8. A method for supplying a support comprising the stepsof: transferring a support and a separator in contact with one surfaceof the support to a positioning portion by a first transfer mechanismwhile the first transfer mechanism supports the other surface of thesupport, moving and rotating a table to align the support and theseparator with respect to a predetermined position of the table in thepositioning portion, placing the support and the separator at thepredetermined position of the table, transferring the support and theseparator from the positioning portion to a slit formation portion,forming a slit which does not pass through the separator in the vicinityof an end portion of the support in the slit formation portion,transferring the support and the separator from the slit formationportion to a peeling portion by a second transfer mechanism while thesecond transfer mechanism supports the other surface of the support, andholding and extending the separator overlapping with the end portion ofthe support, and then peeling the separator from the support by apeeling mechanism.
 9. The method for supplying the support according toclaim 8, wherein a camera takes an image for determining whether thesupport and the separator are positioned at the predetermined positionof the table in the step of placing the support and the separator at thepredetermined position of the table.
 10. The method for supplying thesupport according to claim 8, wherein the table rotates in the slitformation portion before the step of forming the slit.
 11. The methodfor supplying the support according to claim 8, further comprising thestep of: irradiating the one surface of the support with an ultrasonicwave and suctioning an atmosphere while blowing compressed air; orirradiating the one surface of the support with an ultraviolet ray. 12.The method for supplying the support according to claim 8, furthercomprising the step of: irradiating the one surface of the support withan ultrasonic wave and suctioning an atmosphere while blowing compressedair; and irradiating the one surface of the support with an ultravioletray.
 13. A semiconductor device comprising the support supplied by themethod for supplying the support according to claim
 8. 14. A lightemitting device comprising the support supplied by the method forsupplying the support according to claim
 8. 15. A display devicecomprising the support supplied by the method for supplying the supportaccording to claim 8.